Spin Polarization Properties of Pentagonal PdSe2 Induced by 3D Transition-Metal Doping: First-Principles Calculations

Zhao, Xin-Hao; Qiu, Bin; Hu, Guichao; Yue, Weiwei; Ren, Jing; Yuan, Xiaobo

doi:10.3390/ma11112339

Cited by 15 publications

(12 citation statements)

References 39 publications

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“…This important peculiarity of PdSe 2 could enhance its light absorption capability . The practical application of PdSe 2 can be further diversified by the strong spin–orbit coupling and the tunable topological quantum phase transitions, as well as by the induced ferromagnetism with Curie temperature beyond room temperature . Hence, 2D pentagonal PdSe 2 is very promising for the design of new functionalities in higher performance electronic devices that combine the charge, spin, and other degrees of freedom resulting from the low symmetry.…”

Section: Introductionmentioning

confidence: 99%

Pressure‐Tunable Ambipolar Conduction and Hysteresis in Thin Palladium Diselenide Field Effect Transistors

Bartolomeo

Pelella

Liu

et al. 2019

Adv Funct Materials

115

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Few-layer palladium diselenide (PdSe 2 ) field effect transistors are studied under external stimuli such as electrical and optical fields, electron irradiation, and gas pressure. The ambipolar conduction and hysteresis are observed in the transfer curves of the as-exfoliated and unprotected PdSe 2 material. The ambipolar conduction and its hysteretic behavior in the air and pure nitrogen environments are tuned. The prevailing p-type transport observed at atmospheric pressure is reversibly turned into a dominant n-type conduction by reducing the pressure, which can simultaneously suppress the hysteresis. The pressure control can be exploited to symmetrize and stabilize the transfer characteristics of the device as required in highperformance logic circuits. The transistors are affected by trap states with characteristic times in the order of minutes. The channel conductance, dramatically reduced by the electron irradiation during scanning electron microscope imaging, is restored after an annealing of several minutes at room temperature. The work paves the way toward the exploitation of PdSe 2 in electronic devices by providing an experiment-based and deep understanding of charge transport in PdSe 2 transistors subjected to electrical stress and other external agents.

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Section: Introductionmentioning

confidence: 99%

Pressure‐Tunable Ambipolar Conduction and Hysteresis in Thin Palladium Diselenide Field Effect Transistors

Bartolomeo

Pelella

Liu

et al. 2019

Adv Funct Materials

115

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“…With the doping of transition-metal atoms such as Cr and Mn, new energy levels were introduced into the band structure of PdSe 2 [ 34 ], which decrease its bandgap and introduce new spin nondegenerate states. These spin states around the Fermi level could cause the spin polarization.…”

Section: Structure and Properties Of Pdsementioning

confidence: 99%

Applications of 2D-Layered Palladium Diselenide and Its van der Waals Heterostructures in Electronics and Optoelectronics

et al. 2021

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The rapid development of two-dimensional (2D) transition-metal dichalcogenides has been possible owing to their special structures and remarkable properties. In particular, palladium diselenide (PdSe2) with a novel pentagonal structure and unique physical characteristics have recently attracted extensive research interest. Consequently, tremendous research progress has been achieved regarding the physics, chemistry, and electronics of PdSe2. Accordingly, in this review, we recapitulate and summarize the most recent research on PdSe2, including its structure, properties, synthesis, and applications. First, a mechanical exfoliation method to obtain PdSe2 nanosheets is introduced, and large-area synthesis strategies are explained with respect to chemical vapor deposition and metal selenization. Next, the electronic and optoelectronic properties of PdSe2 and related heterostructures, such as field-effect transistors, photodetectors, sensors, and thermoelectric devices, are discussed. Subsequently, the integration of systems into infrared image sensors on the basis of PdSe2 van der Waals heterostructures is explored. Finally, future opportunities are highlighted to serve as a general guide for physicists, chemists, materials scientists, and engineers. Therefore, this comprehensive review may shed light on the research conducted by the 2D material community.

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“…The magnetic properties of group 10 TMDs result from the complex interplay of CFS, electronic correlations and transition metal d-bands [66]. The group 10 TMDs spans over the simple diamagnetic to complex ferromagnetic behaviour [84,87,132,[140][141][142][143][144][145][146][147][148][149]. NiS 2 is a Mott insulator and its magnetism is very complex [77,80,89].…”

Section: Magnetic Propertiesmentioning

confidence: 99%

Electronic and topological properties of group-10 transition metal dichalcogenides

Hooda¹,

Yadav²,

Samal³

2020

J. Phys.: Condens. Matter

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The group 10 transition metal dichalcogenides (TMDs) (MX 2: M = Ni, Pd, Pt; X = S, Se, Te) have attracted much attention in the last few decades because of observation of exotic phases and phenomena such as superconductivity (SC), topological surface states (TSSs), type II Dirac fermions, helical spin texture, Rashba effect, 3D Dirac plasmons, metal–insulator transitions, charge density waves (CDW) etc. In this review, we cover the experimental and theoretical progress on the physical phenomena influenced by the strong electron–electron correlation of the group-10 TMDs from the past to the present. We have especially emphasized on the SC and topological phases in the bulk as well as in atomically thin materials.

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Spin Polarization Properties of Pentagonal PdSe2 Induced by 3D Transition-Metal Doping: First-Principles Calculations

Cited by 15 publications

References 39 publications

Pressure‐Tunable Ambipolar Conduction and Hysteresis in Thin Palladium Diselenide Field Effect Transistors

Pressure‐Tunable Ambipolar Conduction and Hysteresis in Thin Palladium Diselenide Field Effect Transistors

Applications of 2D-Layered Palladium Diselenide and Its van der Waals Heterostructures in Electronics and Optoelectronics

Electronic and topological properties of group-10 transition metal dichalcogenides

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