2000
DOI: 10.1063/1.1330562
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Spin-polarized current switching of a Co thin film nanomagnet

Abstract: A thin film Co nanomagnet in the shape of an elongated hexagon has been incorporated in a vertical device structure consisting of the nanomagnet and a thin Cu spacer layer formed on top of a thick Co film. The spin-polarized current flowing between the nanomagnet and the Co film is used to abruptly switch the magnetic alignment of the nanomagnet relative to that of the thick Co layer by the transfer of spin angular momentum from the conduction electrons to the nanomagnet moment. The shape anisotropy in the nan… Show more

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Cited by 364 publications
(232 citation statements)
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“…However, in a typical perpendicular geometry switching by spin-transfer torque 5 this does not have to be the case. To switch the magnetization by electrical spin-transfer torque 5 we need a typical charge current density of ≈5 × 10 11 A m −2 .…”
Section: ∇Tmentioning
confidence: 99%
See 2 more Smart Citations
“…However, in a typical perpendicular geometry switching by spin-transfer torque 5 this does not have to be the case. To switch the magnetization by electrical spin-transfer torque 5 we need a typical charge current density of ≈5 × 10 11 A m −2 .…”
Section: ∇Tmentioning
confidence: 99%
“…However, in a typical perpendicular geometry switching by spin-transfer torque 5 this does not have to be the case. To switch the magnetization by electrical spin-transfer torque 5 we need a typical charge current density of ≈5 × 10 11 A m −2 . The same stack should be able to switch by applying a temperature difference of only a few tens of degrees as earlier theoretical 14,16 and experimental 29 studies have indicated.…”
Section: ∇Tmentioning
confidence: 99%
See 1 more Smart Citation
“…A simulation beyond our simple model might then be required for a quantitative description. Experimental values of R 0 I p for Co͉ Au nanopillars can be read off the figures published by different groups, amounting to ͑in mV͒ 19, 62 23.0, 63 and 22.5. 18,19 These numbers agree well with the following results.…”
Section: Relevance For Experimentsmentioning
confidence: 99%
“…Such processes offer only limited selectivity between different materials and so, in order to terminate the process at a particular level, accurate timing or end-point detection is required. Nevertheless, ion-milling can be accurately controlled in practice so that, for example, one magnetic layer can be left unpatterned to form a point-contact geometry in which magnetostatic coupling is minimized [19,20]. Ion-milling also results in redeposition of sputtered atoms, which can coat the side walls of the nanopillars and potentially modify their electrical properties by, for example, short-circuiting a tunnel barrier.…”
Section: (B) Etch-back Patterningmentioning
confidence: 99%