Spin-polarized half-metallic state of a ferromagnetic<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>δ</mml:mi></mml:math>layer in a semiconductor host

Caprara, S.; Тугушев, В. В.; Chulkov, Eugene V.

doi:10.1103/physrevb.84.085311

Cited by 15 publications

(21 citation statements)

References 27 publications

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“…The presence of the magnetic metal layers leads to the formation of spin-polarized quasi-two-dimensional bands, which strongly affect the magnetic properties of these materials. [28][29][30][31] According to the experimental data, available mostly for the A III B V /Mn DMAs, magnetic δ-layers are essentially smeared in the perpendicular direction [32][33][34] and can contain clusters and secondary phases. 35 Besides, Mn atoms are always present at the background level in the undoped semiconductor spacers.…”

Section: Introductionmentioning

confidence: 99%

Ab initiostudy of the magnetic ordering in Si/Mn digital alloys

et al. 2011

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We present a first-principles study of the electronic structure and exchange interactions in Si/Mn digital magnetic alloy (DMA) consisting of Mn monolayers embedded in a Si matrix stacking along [001] direction. The main focus of our study is on the dependence of magnetic properties on the morphology of the Mn monolayer. Three different structural models for the Mn monolayer are considered: manganese in substitutional (i), interstitial (ii), and both interstitial and substitutional (iii) positions. The atomic positions in Si/Mn DMA are determined by means of the VASP code and then serve as input for multiple-scattering calculations of the electronic and magnetic structure. The magnetic force theorem is used to evaluate the exchange coupling parameters. A Heisenberg model based on those parameters is used to estimate magnon frequencies and magnetic phase-transition temperatures for different anisotropies. The magnetic properties of Si/Mn DMA are found to be strongly dependent on the underlying crystalline structure.

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Section: Introductionmentioning

confidence: 99%

Ab initiostudy of the magnetic ordering in Si/Mn digital alloys

et al. 2011

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“…Second, quantum fluctuations in QW stabilize magnetic order in FM layer, while suppressing the amplitude of the magnetic moment and the transition temperature with respect to those found within the mean-field estimates [15]. Third, electrostatic charge redistribution occurs between QW and the FM layer due to their different density of states and deepness; as a result, modification of the magnetic characteristics of FM layer occurs on purely classical grounds, even without quantum magnetic proximity effect [16].…”

Section: Introductionmentioning

confidence: 99%

Pecularities of Hall effect in GaAs/δ〈Mn〉/GaAs/InxGa1−xAs/ GaAs (x ≈ 0.2) heterostructures with high Mn content

et al. 2012

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Transport properties of GaAs/δ/GaAs/In x Ga 1-x As/GaAs structures containing In x Ga 1-x As (х ≈ 0.2) quantum well (QW) and Mn delta layer (DL) with relatively high, about one Mn monolayer (ML) content, are studied. In these structures DL is separated from QW by GaAs spacer with the thickness d s = 2-5 nm. All structures possess a dielectric character of conductivity and demonstrate a maximum in the resistance temperature dependence R xx (T) at the temperature ≈ 46К which is usually associated with the Curie temperature T C of ferromagnetic (FM) transition in DL. However, it is found that the Hall effect concentration of holes p H in QW does not decrease below T C as one ordinary expects in similar systems. On the contrary, the dependence p H (T) experiences a minimum at T = 80-100 K depending on the spacer thickness, then increases at low temperatures more strongly than d s is smaller and reaches a giant value p H = (1-2)⋅10 13 cm -2 . Obtained results are interpreted in the terms of magnetic proximity effect of DL on QW, leading to induce spin polarization of the holes in QW. Strong structural and magnetic disorder in DL and QW, leading to the phase segregation in them is taken into consideration. The high p H value is explained as a result of compensation of the positive sign normal Hall effect component by the negative sign anomalous Hall effect component.2

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“…From the theoretical side, however, even the simple model of atomically flat TM monolayers (MLs) can be very useful. [17][18][19][20] For instance, ab initio calculations predict A IV /Mn DAs (A IV = Si,Ge), in which Mn MLs formed substitutionally, to be half metallic ferromagnets. [21][22][23][24][25][26][27][28][29] Recently, the critical temperatures of the intralayer magnetic ordering in A IV /Mn DAs were estimated for the case of easy-axis anisotropy by means of Monte Carlo (MC) simulations.…”

Section: Introductionmentioning

confidence: 99%

Search for stable ferromagnets amongAIV/Fe digital alloys (AIV=Si, Ge) using first-principles calculations

et al. 2012

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Using first-principles electronic structure calculations we investigate the existence of stable ferromagnets among the A IV /Fe digital alloys (A IV = Si,Ge), modeled as periodic sequence of Fe monolayers in the A IV host. Total-energy calculations and the magnetic force theorem are exploited for accurate determination of the magnetic ordering. To estimate the critical temperatures, Monte Carlo simulations are employed, while the renormalization-group analytical expressions are applied to assess the impact of the interlayer exchange on the critical temperature values. According to our results, among the systems under consideration only the Ge-based alloys feature a stable ferromagnetic ordering at nonzero temperature. The critical temperatures of these systems were found to be strongly dependent on the underlying crystal structure.

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Spin-polarized half-metallic state of a ferromagneticδlayer in a semiconductor host

Cited by 15 publications

References 27 publications

Ab initiostudy of the magnetic ordering in Si/Mn digital alloys

Ab initiostudy of the magnetic ordering in Si/Mn digital alloys

Pecularities of Hall effect in GaAs/δ〈Mn〉/GaAs/InxGa1−xAs/ GaAs (x ≈ 0.2) heterostructures with high Mn content

Search for stable ferromagnets amongAIV/Fe digital alloys (AIV=Si, Ge) using first-principles calculations

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