Spin read-out in atomic qubits in an all-epitaxial three-dimensional transistor

Koch, Matthias; Keizer, J. G.; Pakkiam, Prasanna; Keith, D. A.; House, Matthew; Peretz, Eldad; Simmons, M. Y.

doi:10.1038/s41565-018-0338-1

Cited by 63 publications

(72 citation statements)

References 27 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To demonstrate the applicability of the technique to non-conventional samples, we engineered rare earth elements directly in the core of a single mode optical fibre. Beyond the field of quantum technologies, the recoil implantation technique is appealing for shallow doping of single electron transistors 45 , deterministic direct writing of near-surface dopants 46 , 47 or controlled introduction of magnetic elements for magnetism at the nanoscale 48 . Finally, one of the biggest advantages of this technique is the ability to engineer selected defects in atomically thin materials, which by definition requires ultra-shallow implants.…”

Section: Discussionmentioning

confidence: 99%

Versatile direct-writing of dopants in a solid state host through recoil implantation

et al. 2020

View full text Add to dashboard Cite

Modifying material properties at the nanoscale is crucially important for devices in nano-electronics, nanophotonics and quantum information. Optically active defects in wide band gap materials, for instance, are critical constituents for the realisation of quantum technologies. Here, we demonstrate the use of recoil implantation, a method exploiting momentum transfer from accelerated ions, for versatile and mask-free material doping. As a proof of concept, we direct-write arrays of optically active defects into diamond via momentum transfer from a Xe+ focused ion beam (FIB) to thin films of the group IV dopants pre-deposited onto a diamond surface. We further demonstrate the flexibility of the technique, by implanting rare earth ions into the core of a single mode fibre. We conclusively show that the presented technique yields ultra-shallow dopant profiles localised to the top few nanometres of the target surface, and use it to achieve sub-50 nm positional accuracy. The method is applicable to non-planar substrates with complex geometries, and it is suitable for applications such as electronic and magnetic doping of atomically-thin materials and engineering of near-surface states of semiconductor devices.

show abstract

Section: Discussionmentioning

confidence: 99%

Versatile direct-writing of dopants in a solid state host through recoil implantation

et al. 2020

View full text Add to dashboard Cite

show abstract

“…[ 4,5 ] On the large‐scale and high‐volume printing potential, such printed electronics are expected to enable wearable and portable devices, with a wide range of applications ranging from sensors, displays, solar cells, and other electronic circuits. [ 6–9 ] On the small scales, there were some successful demonstrations of atomic/nanoscale creation of conductive traces that have been reported by use of scanning probe microscopes under extremely low temperature, [ 10,11 ] ultrahigh vacuum conditions, [ 12 ] precision positioning of carbon nanotubes, [ 13 ] or physical or chemical atomic layer deposition. [ 14 ] All these approaches are however unlikely scalable for manufacturing sensor substrates using temperature‐sensitive fibrous materials.…”

Section: Figurementioning

confidence: 99%

Surface‐Mediated Interconnections of Nanoparticles in Cellulosic Fibrous Materials toward 3D Sensors

et al. 2020

View full text Add to dashboard Cite

Fibrous materials serve as an intriguing class of 3D materials to meet the growing demands for flexible, foldable, biocompatible, biodegradable, disposable, inexpensive, and wearable sensors and the rising desires for higher sensitivity, greater miniaturization, lower cost, and better wearability. The use of such materials for the creation of a fibrous sensor substrate that interfaces with a sensing film in 3D with the transducing electronics is however difficult by conventional photolithographic methods. Here, a highly effective pathway featuring surface‐mediated interconnection (SMI) of metal nanoclusters (NCs) and nanoparticles (NPs) in fibrous materials at ambient conditions is demonstrated for fabricating fibrous sensor substrates or platforms. Bimodally distributed gold–copper alloy NCs and NPs are used as a model system to demonstrate the semiconductive‐to‐metallic conductivity transition, quantized capacitive charging, and anisotropic conductivity characteristics. Upon coupling SMI of NCs/NPs as electrically conductive microelectrodes and surface‐mediated assembly (SMA) of the NCs/NPs as chemically sensitive interfaces, the resulting fibrous chemiresistors function as sensitive and selective sensors for gaseous and vaporous analytes. This new SMI–SMA strategy has significant implications for manufacturing high‐performance fibrous platforms to meet the growing demands of the advanced multifunctional sensors and biosensors.

show abstract

“…Furthermore the rf SET requires a matching circuit with only a quality factor ≈40, whereas high-sensitivity dispersive readout uses Q > 1000, giving the rf SET an advantage in overall bandwidth. Long term, for donor-based qubits, the required additional leads for the SET are proposed to reside in a three-dimensional architecture [9,36], thereby providing a more scalable layout.…”

Section: (C) Colored Curves Inmentioning

confidence: 99%

Single-Shot Spin Readout in Semiconductors Near the Shot-Noise Sensitivity Limit

et al. 2019

View full text Add to dashboard Cite

Fault-tolerant quantum computation requires qubit measurements to be both high fidelity and fast to ensure that idling qubits do not generate more errors during the measurement of ancilla qubits than can be corrected. Towards this goal, we demonstrate single-shot readout of semiconductor spin qubits with 97% fidelity in 1.5 μs. In particular, we show that we can engineer donor-based single-electron transistors (SETs) in silicon with atomic precision to measure single spins much faster than the spin decoherence times in isotopically purified silicon (270 μs). By designing the SET to have a large capacitive coupling between the SET and target charge, we can optimally operate in the "strong-response" regime to ensure maximal signal contrast. We demonstrate single-charge detection with a signal-to-noise ratio (SNR) of 12.7 at 10 MHz bandwidth, corresponding to a SET charge sensitivity (integration time for SNR ¼ 2) of 2.5 ns. We present a theory of the shot-noise sensitivity limit for the strong-response regime which predicts that the present sensitivity is about one order of magnitude above the shot-noise limit. By reducing cold amplification noise to reach the shot-noise limit, it should be theoretically possible to achieve high-fidelity, single-shot readout of an electron spin in silicon with a total readout time of approximately 36 ns.

show abstract

Spin read-out in atomic qubits in an all-epitaxial three-dimensional transistor

Cited by 63 publications

References 27 publications

Versatile direct-writing of dopants in a solid state host through recoil implantation

Versatile direct-writing of dopants in a solid state host through recoil implantation

Surface‐Mediated Interconnections of Nanoparticles in Cellulosic Fibrous Materials toward 3D Sensors

Single-Shot Spin Readout in Semiconductors Near the Shot-Noise Sensitivity Limit

Contact Info

Product

Resources

About