Spin Readout of a CMOS Quantum Dot by Gate Reflectometry and Spin-Dependent Tunneling

Ciriano-Tejel, Virginia N.; Fogarty, Michael A.; Schaal, Simon; Hutin, Louis; Bertrand, Benoît; Ibberson, Lisa; González-Zalba, M. Fernando; Li, Jing; Niquet, Yann-Michel; Vinet, M.; Morton, John J. L.

doi:10.1103/prxquantum.2.010353

Cited by 62 publications

(54 citation statements)

References 56 publications

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“…In the RF case, gate reflectometry can enable measurement at almost any gate electrode, and has yielded remarkable results [39][40][41]. This approach bolsters applicability to dense gate architectures [31,[42][43][44][45] but requires a bulky LC resonator elsewhere in the system. Here we employ PSB, which permits higher measurement fidelity and greater flexibility in applied magnetic field than does SDT, and a DCS, which requires only a structure of similar scale to-and simultaneously fabricated with-the qubits themselves.…”

Section: Introductionmentioning

confidence: 98%

Fast and high-fidelity state preparation and measurement in triple-quantum-dot spin qubits

Blumoff¹,

Pan²,

Keating³

et al. 2021

Preprint

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We demonstrate rapid, high-fidelity state preparation and measurement in exchange-only Si/SiGe triple-quantum-dot qubits. Fast measurement integration (980 ns) and initialization (≈300 ns) operations are performed with all-electrical, baseband control. We emphasize a leakage-sensitive joint initialization and measurement metric, developed in the context of exchange-only qubits but applicable more broadly, and report an infidelity of 2.5±0.5×10 −3 . This result is enabled by a highvalley-splitting heterostructure, initialization at the 2-to-3 electron charge boundary, and careful assessment and mitigation of T1 during spin-to-charge conversion. The ultimate fidelity is limited by a number of comparably-important factors, and we identify clear paths towards further improved fidelity and speed. Along with an observed single-qubit randomized benchmarking error rate of 1.7×10 −3 , this work demonstrates initialization, control, and measurement of Si/SiGe triple-dot qubits at fidelities and durations which are promising for scalable quantum information processing.

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Section: Introductionmentioning

confidence: 98%

Fast and high-fidelity state preparation and measurement in triple-quantum-dot spin qubits

Blumoff¹,

Pan²,

Keating³

et al. 2021

Preprint

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“…According to the latest experiment, the relaxation time based on silicon platform has reached

T_{1} = 9 s

. [ 51 ] In this work, we focus on the suppression on

δ ω_{q}

due to the detuning noise, and we simulate the single‐qubit gate fidelity by using the two‐level structure as shown in Equation (10).…”

Section: Resultsmentioning

confidence: 99%

“…However, as stated above, the relaxation rate in the silicon‐based platform can be substantially low, since the relaxation time in the experiment has reached

T_{1} = 9 s

. [ 51 ] Therefore, the relaxation of the coupled system can be mainly owing to the leakage to the excited state

| f ⟩

and the resonator decay.…”

Section: Resultsmentioning

confidence: 99%

Universal Singlet‐Triplet Qubits Implemented Near the Transverse Sweet Spot

2021

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The key to realizing fault‐tolerant quantum computation for singlet‐triplet (ST) qubits in semiconductor double quantum dot (DQD) is to operate both the single‐ and two‐qubit gates with high fidelity. The feasible way includes operating the qubit near the transverse sweet spot (TSS) to reduce the leading order of the noise, as well as adopting the proper pulse sequences which are immune to noise. The single‐qubit gates can be achieved by introducing an AC drive on the detuning near the TSS. The large dipole moment of the DQDs at the TSS has enabled strong coupling between the qubits and the cavity resonator, which leads to two‐qubit entangling gates. When operating in the proper region and applying modest pulse sequences, both single‐ and two‐qubit gates have fidelity higher than 99%. The results in this paper suggest that taking advantage of the appropriate pulse sequences near the TSS can be effective to obtain high‐fidelity ST qubits.

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“…Industrial platforms based on silicon FinFETs and fully‐depleted silicon‐on‐insulator (FDSOI) nanowires have been used recently to isolate single electrons and control their spins. [ 97,98 ] In these situations, the electron would be either accumulated at a corner of the nanowire or at the top surface of a FinFET, such that the electrostatic confinement can be achieved with a single gate wrapping around the transistor. This difference in confinement strategy in comparison to planar geometries has a large impact on qubit devices.…”

Section: Overview Of Materials Choicesmentioning

confidence: 99%

Materials for Silicon Quantum Dots and their Impact on Electron Spin Qubits

Saraiva

Lim

Yang

et al. 2021

Adv Funct Materials

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Quantum computers have the potential to efficiently solve problems in logistics, drug and material design, finance, and cybersecurity. However, millions of qubits will be necessary for correcting inevitable errors in quantum operations. In this scenario, electron spins in gate‐defined silicon quantum dots are strong contenders for encoding qubits, leveraging the microelectronics industry know‐how for fabricating densely populated chips with nanoscale electrodes. The sophisticated material combinations used in commercially manufactured transistors, however, will have a very different impact on the fragile qubits. Here some key properties of the materials that have a direct impact on qubit performance and variability are reviewed.

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Spin Readout of a CMOS Quantum Dot by Gate Reflectometry and Spin-Dependent Tunneling

Cited by 62 publications

References 56 publications

Fast and high-fidelity state preparation and measurement in triple-quantum-dot spin qubits

Fast and high-fidelity state preparation and measurement in triple-quantum-dot spin qubits

Universal Singlet‐Triplet Qubits Implemented Near the Transverse Sweet Spot

Materials for Silicon Quantum Dots and their Impact on Electron Spin Qubits

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