Spin relaxation and spin Hall transport in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mn>5</mml:mn><mml:mi>d</mml:mi></mml:math>transition-metal ultrathin films

Long, Nguyễn Hoàng; Mavropoulos, Phivos; Zimmermann, Bernd; Bauer, David; Blügel, Stefan; Mokrousov, Yuriy

doi:10.1103/physrevb.90.064406

Cited by 28 publications

(28 citation statements)

References 41 publications

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“…Interfacial spin-orbit scattering affects spin transport in GMR multilayers [2,3], spin pumping [11,12], spin injection [13], and Gilbert damping [14]. It contributes to the spin relaxation in metallic films [15][16][17] and to the magnetoanisotropies in the resistance of magnetic miltilayers [18], tunnelling conductance [19][20][21][22], and Andreev reflection [23,24], which are especially large when the magnetic electrodes are half-metallic [24,25]. Interfacial spin-flip scattering can also appear due to spin fluctuations [26].…”

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“…Moreover, this description of an interface is generally incomplete, because the spin-flip transmittance and the reflectances on two sides are all independent parameters. For example, the spin-flip reflectance is relevant for spin injection [33] and for the interface-induced spin relaxation in a spin reservoir [15][16][17]. The existing formulations [13,34,35] including only one interfacial spin-relaxation parameter are, therefore, also incomplete.…”

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Theory of Spin Loss at Metallic Interfaces

2016

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Interfacial spin-flip scattering plays an important role in magnetoelectronic devices. Spin loss at metallic interfaces is usually quantified by matching the magnetoresistance data for multilayers to the Valet-Fert model, while treating each interface as a fictitious bulk layer whose thickness is δ times the spin-diffusion length. By employing the properly generalized circuit theory and the scattering matrix approaches, we derive the relation of the parameter δ to the spin-flip transmission and reflection probabilities at an individual interface. It is found that δ is proportional to the square root of the probability of spin-flip scattering. We calculate the spin-flip transmission probability for flat and rough Cu/Pd interfaces using the Landauer-Büttiker method based on the first-principles electronic structure and find δ in reasonable agreement with experiment.

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Theory of Spin Loss at Metallic Interfaces

2016

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“…The perturbed potential and density were also calculated within the LDA. The T -matrix and scattering rates were calculated in the KKR representation as described elsewhere 24,25 . Structural relaxations around the vacancy can be important in the calculation of the vacancy-formation energy.…”

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Lifetime and surface-to-bulk scattering off vacancies of the topological surface state in the three-dimensional strong topological insulators Bi2Te3 and Bi2Se3

Rüßmann

Mavropoulos

Blügel

2019

Journal of Physics and Chemistry of Solids

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We analyze the finite lifetimes of the topologically protected electrons in the surface state of Bi 2 Te 3 and Bi 2 Se 3 due to elastic scattering off surface vacancies and as a function of energy. The scattering rates are decomposed into surface-to-surface and surface-to-bulk contributions, giving us new fundamental insights into the scattering properties of the topological surface states (TSS). If the number of possible final bulk states is much larger than the number of final surface states, then the surface-to-bulk contribution is of importance, otherwise the surface-to-surface contribution dominates. Additionally, we find defect resonances that have a significant impact on the scattering properties of the TSS. They can strongly change the lifetime of the surface state to vary between tens of fs to ps at surface defect concentrations of 1 at%.

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“…The energy-dependent longitudinal charge and transverse spin Hall conductivities due to scattering off impurities entering Eq. 3 are calculated using the Boltzmann approach [11,22,23]. The scattering rates as well as the conductivities are calculated at a nominal impurity concentration of 1% per surface unit cell.…”

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Giant spin Nernst effect induced by resonant scattering at surfaces of metallic films

et al. 2016

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A new concept realizing giant spin Nernst effect in nonmagnetic metallic films is introduced. It is based on the idea of engineering an asymmetric energy dependence of the longitudinal and transverse electrical conductivities, as well as a pronounced energy dependence of the spin Hall angle in the vicinity of the Fermi level by the resonant impurity states at the Fermi level. We employ an analytical model and demonstrate the emergence of a giant spin Nernst effect in Ag(111) films using ab-inito calculations combined with the Boltzmann approach for transport properties arising from skew scattering off impurities. PACS numbers: 72.25.Rb, 73.50.Bk, 72.25.Ba, Within the past few years, the field of spin caloric transport has attracted broad interest owing to new challenges and vistas in applications which combine spintronic as well as thermoelectric concepts [1]. In this field, thermal gradient is used as an ultimate agent to generate a spin current, in analogy to the generation of a charge current in conventional thermoelectrics. As a promiment spincaloritronics phenomenon, the relativistic spin Nernst effect (SNE) enables a way to generate a pure transverse spin current in a sample subject to an applied temperature gradient [2][3][4]. The SNE bears an analogy to the spin Hall effect (SHE) [5,6], which has become one of the most efficient ways of generating spin currents in spintronics. Owing to the fact that the SHE has been successfully observed in various types of experiments [7][8][9], it is expected that the spin Nernst effect would also be detectable. However, limitations on the magnitude of temperature gradients in metals can diminish the magnitude of the spin Nernst currents [10].Ab-initio studies [11][12][13][14] and experiments [15] suggest that the extrinsic SHE induced by the skew-scattering off impurities can be large due to a large difference in the spin-orbit coupling strength of the impurities and the host. However, this argument is not applicable to the SNE, because the thermal transport coefficients entering the expression for the spin Nernst conductivity (SNC) are determined to a first approximation by the derivative of the conductivities around the Fermi energy (E F ), and not by the their values directly at it. As a consequence, the SNE is more sensitive to changes in the electronic structure as a function of energy, as compared to the SHE. A requirement for the SNC to be large is that the energy dependence of the conductivities should be very asymmetric with respect to E F .Recently, Tauber et al. [10,16], using first-principles techniques combined with Boltzmann approach, computed the SNE in Cu bulk, caused by spin-dependent scattering off substitutional impurities such as Ti, Au, Bi. The magnitude of the SNC was predicted to be about 16 (A/K m) at 300 K in Cu 0.99 Au 0.01 alloy. It corresponds to a spin current of about 10 µA when using a sample with the dimensions of 100×100×100 nm [9] and a temperature gradient of 50 K/µm [17]. For the same Cu(Au) alloy, Wimmer et al. obtained a somewhat ...

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Spin relaxation and spin Hall transport in5dtransition-metal ultrathin films

Cited by 28 publications

References 41 publications

Theory of Spin Loss at Metallic Interfaces

Theory of Spin Loss at Metallic Interfaces

Lifetime and surface-to-bulk scattering off vacancies of the topological surface state in the three-dimensional strong topological insulators Bi2Te3 and Bi2Se3

Giant spin Nernst effect induced by resonant scattering at surfaces of metallic films

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