Conventional gaseous
BBr3
and CVD
SiO2
are presently used in the Westinghouse baseline process for the production of high efficiency (13%–15%) dendritic web solar cells. The objective of this study was to replace the CVD
SiO2
mask and the subsequent
BBr3
diffusion step with a liquid
SiO2/normalliquid
boron dopant diffusion process. The number of process steps are reduced significantly with the use of the liquid process. Data on time‐temperature relationship on sheet resistance, junction depth, etc., were obtained and are presented. Various application techniques for the liquid process were investigated. As a first step, a manually applied sponge‐squeegee applicator was used, which was later replaced with a meniscus coating machine. This equipment permitted the application of uniform layers of liquid dopants of controlled thickness on the dendritic web. Various runs were made to make direct comparison of the liquid and baseline processes. The results of cell efficiencies achieved using the liquid process indicate that high efficiencies (13%–15%) can be achieved with this process. Results of
VOC
,
ISC
, fill factor, etc., are presented in detail and compared with the baseline process. Dark IV measurements made on liquid‐processed cells indicate excellent quality junctions and high lifetime values. The series and shunt resistance measurements on typical cells show no difference as compared with the baseline process. Junction profiles are presented for both a gaseous diffused cell and a liquid processed cell. The profiles show no dissimilarities.