Spin Seebeck effect in thin films of the Heusler compound Co<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow /><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>MnSi

Bosu, S.; Sakuraba, Yuya; Uchida, K.; Saito, K.; Ôta, T.; Saitoh, Eiji; Takanashi, Kōki

doi:10.1103/physrevb.83.224401

Cited by 156 publications

(112 citation statements)

References 30 publications

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“…30,31 Understanding the correlation between the electrical spin polarization and the spin-dependent Seebeck coefficient may be important for further development of thermal spin injection and may provide a relationship between the spindependent Seebeck effect and the spin Seebeck effect. 32 Systematic experiments for various ferromagnetic alloys with further development of the band-structure calculations will be indispensable to find more excellent materials for the thermal spin injector.…”

Section: Resultsmentioning

confidence: 99%

Efficient thermal spin injection using CoFeAl nanowire

Itoh

Kimura

2014

NPG Asia Mater

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Nanoelectronic devices based on electron spin can overcome the physical limitations of the present semiconductor technology because of their low power consumption while exploiting the spin degree of freedom of electrons. Although enhancing the efficiency of generation of the spin current is imperative and a primary issue for the practical application of spin-based electronics, seamless device integration with the conventional complementary metal-oxide semiconductor technology is another important milestone for developing spin-based nanoelectronics. In particular, the preparation of nanosized, magnetic, multilayered structures with electrical connections to individual complementary metal-oxide semiconductor circuits significantly complicates the fabrication procedure of nanoelectronic devices. Thermal spin injection, which is a recently discovered unique characteristic of spin current, may be an innovative method for simplifying device integration without the need for electricity, namely wireless spintronics. However, the feasibility of using the thermal spin injection method is poor because of its extremely low-generation efficiency. Here, we demonstrate that a highly spin-polarized, ferromagnetic CoFeAl electrode with a favorable band structure has excellent properties for thermal spin injection. The spin-dependent Seebeck coefficient is approximately 70 lV K À1 , which facilitates highly efficient generation of the spin current from heat. The heat generates approximately 100 times more spin voltage than a conventional ferromagnetic injector at room temperature. This innovative demonstration may open a new route for spin-device integration and its applications.

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Section: Resultsmentioning

confidence: 99%

Efficient thermal spin injection using CoFeAl nanowire

Itoh

Kimura

2014

NPG Asia Mater

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“…21 A typical setup, utilizing an out-of-plane temperature gradient and an in-plane magnetic field, has been used to investigate the ANE in previous works. [22][23][24][25][26] The trouble with this configuration is that, in addition to generating an ANE voltage, the out-of-plane temperature gradient can also generate a spin current through the so-called longitudinal spin Seebeck effect (LSSE), 22,[27][28][29][30][31][32][33] which flows directly from the ferromagnetic (FM) into the adjacent non-magnetic metal (NM) and generates a voltage because of the inverse spin Hall effect (ISHE). In order to distinguish the spin Seebeck effect (SSE) and ANE, extensive efforts [34][35][36][37] have been made to compare the voltage in different temperature gradient configurations.…”

mentioning

confidence: 99%

Anomalous Nernst effect in Ir22Mn78/Co20Fe60B20/MgO layers with perpendicular magnetic anisotropy

et al. 2017

Applied Physics Letters

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The anomalous Nernst effect in a perpendicularly magnetized Ir22Mn78/Co20Fe60B20/MgO thin film is measured using well-defined in-plane temperature gradients. The anomalous Nernst coefficient reaches 1.8 μV/K at room temperature, which is almost 50 times larger than that of a Ta/Co20Fe60B20/MgO thin film with perpendicular magnetic anisotropy. The anomalous Nernst and anomalous Hall results in different sample structures revealing that the large Nernst coefficient of the Ir22Mn78/Co20Fe60B20/MgO thin film is related to the interface between CoFeB and IrMn.

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“…The most spectacular development in recent in years in the field of spin caloritronics has been the discovery of the spin Seebeck effect, first in metals [59], and later in electrically insulating Yttrium Iron Garnet (YIG) [60] and ferromagnetic semiconductors (GaMnAs) [61,62]. The spin Seebeck effect stands for the electromotive force generated by a ferromagnet with a temperature bias over a strip of metal normal to the heat current.…”

Section: Spin Seebeck Effectmentioning

confidence: 99%