Spin splitting and Rashba effect at mono-layer GaTe in the presence of strain

Ariapour, Mohammad; Touski, Shoeib Babaee

doi:10.1088/2053-1591/ab1211

Cited by 17 publications

(20 citation statements)

References 59 publications

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“…The value of the Rashba coefficient is negligible at M to Γ path and we have reported it along with M to K path. The Rashba coefficient is 0.159eV Å that is smaller than reported values for other 2D materials [42][43][44][45][46][47] .…”

Section: Resultscontrasting

confidence: 59%

The Electrical and Spin Properties of Monolayer and Bilayer Janus HfSSe under Vertical Electrical Field

Ghobadi,

Touski

2020

Preprint

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In this paper, the electrical and spin properties of mono-and bilayer HfSSe in the presence of a vertical electric field are studied. The density functional theory is used to investigate their properties. Fifteen different stacking orders of bilayer HfSSe are considered. The mono-and bilayer demonstrate an indirect bandgap, whereas the bandgap of bilayer can be effectively controlled by electric field. While the bandgap of bilayer closes at large electric fields and a semiconductor to metal transition occurs, the effect of a normal electric field on the bandgap of the monolayer HfSSe is quite weak. Spin-orbit coupling causes band splitting in the valence band and Rashba spin splitting in the conduction band of both mono-and bilayer structures. The band splitting in the valence band of the bilayer is smaller than a monolayer, however, the vertical electric field increases the band splitting in bilayer one. The stacking configurations without mirror symmetry exhibit Rashba spin splitting which is enhanced with the electric field.

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Section: Resultscontrasting

confidence: 59%

The Electrical and Spin Properties of Monolayer and Bilayer Janus HfSSe under Vertical Electrical Field

Ghobadi,

Touski

2020

Preprint

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“…For compressive strain, Mexican hat shape of valence band is vanished and top of valence band located at Γ-point and spin splitting vanishes. Moving from compressive strain to tensile strain, Mexican hat is created at top of valence band and the top of valence band goes to Γ * -from Γ-point [28]. In tensile strain, spin splitting in the valence band (∆E S ,V ) increases with the increase of tensile strain.…”

Section: Resultsmentioning

confidence: 99%

“…Two-dimensional monolayer of group-III monochalcogenides [22,23] has attracted remarkable attention due to their various applications in spintronics, electronics [24,25], valleytronics [26] and photonics [27]. Compounds with monolayer structures from Groups III-VI groups MX (M=Ga, In, X=S, Se, Te) with buckled hexagonal geometry were originated to have a strong Rashba effect and the band splitting [28,29,30]. These features show the way for the design of pioneer spin field-effect transistors.…”

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confidence: 99%

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Strain engineering of spin and Rashba splitting in Group-III monochalcogenide MX (M = Ga, In and X = S, Se, Te) monolayer

Ariapour

Touski

2020

Journal of Magnetism and Magnetic Materials

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In this paper, spin properties of monolayer MX (M=Ga, In and X=S, Se, Te) in the presence of strain are studied. Density functional theory is used to investigate spin properties. The strain changes modification of bandgap due to spin-orbit coupling, the results indicate the spin-orbit coupling has a higher effect in the compressive regime. Also, spin splitting in the conduction and valence bands respect to strain are compared for six materials. The location of conduction band minimum (CBM) imposed a type of spin properties. These materials with mirror symmetry can display the Rashba effect while M valley is located at CBM. Strain tunes the conduction band minimum in three valleys (K, M and Γ valleys) and determines which spin effect (spin splitting, Rashba splitting or no spin splitting) has occurred in each strain for every material. Lastly, the relation between the Rashba parameter and the atomic mass is explored and it is observed that there is a linear correlation between atomic mass and Rashba coefficient.

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“…Spin splitting does not occur in the structures AA1, AB2, and AB3 that have inversion symmetry. Structure AA2 demonstrates spin splitting, whereas, there is not any spin splitting in the path from Γ to M points due to its mirror symmetry [35]. Both CBM and VBM of this structure are located on this path.…”

Section: Resultsmentioning

confidence: 83%

Interplay Between Stacking Order and In-plane Strain on the Electrical Properties of Bilayer Antimonene

Touski¹,

Ghobadi²

2020

Preprint

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In this work, the electrical properties of bilayer Antimonene with different stacking orders are studied. Density functional theory with van der Waals (vdW) correction is used to investigate the electrical performances. Two configurations demonstrate considerable bandgaps, whereas, the bandgaps are close to zero for other structures. The in-plane biaxial strain is applied to modify the electrical properties. The bandgap reaches a maximum at a specific strain level and then closes at more enormous compressive and tensile strains. The energy of three valleys (Γ, Q, and K) in the conduction band are explored with the strain. The conduction band minimum switches between these valleys with the strain. Two bands also contribute to the valence band maximum, and the energy of these two bands for various strains is investigated. Finally, the effective mass for the valleys of the conduction band and the valence band are obtained. The effective mass at Γ-valley demonstrates the lowest effective mass.

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Spin splitting and Rashba effect at mono-layer GaTe in the presence of strain

Cited by 17 publications

References 59 publications

The Electrical and Spin Properties of Monolayer and Bilayer Janus HfSSe under Vertical Electrical Field

The Electrical and Spin Properties of Monolayer and Bilayer Janus HfSSe under Vertical Electrical Field

Strain engineering of spin and Rashba splitting in Group-III monochalcogenide MX (M = Ga, In and X = S, Se, Te) monolayer

Interplay Between Stacking Order and In-plane Strain on the Electrical Properties of Bilayer Antimonene

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