“…Correspondingly, advanced electronic devices, such as spin transistors 2 , spin waveguides 3 , spin filters 4 , etc., have been proposed. In narrow-gap semiconductor nanostructures such as InAs-and In 1−x Ga x As quantum wells, the inversion asymmetry of the confining potential due to the presence of the heterojunction 5 results in the spin-orbit interaction (SOI), so that it leads to the spin splitting transport of the carriers in the absence of any applied magnetic field 6 . It is found that the SOI can be employed to generate the spin polarization in a T-shaped structure 7,8 and a pure spin current in a Yshaped junction 9 .…”