2014
DOI: 10.1103/physrevb.90.184401
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Spin transport parameters inNi80Fe20/RuandNi80

Abstract: We present a systematic study of the spin transport properties in two different bilayer systems, Ni 80 Fe 20 /Ru and Ni 80 Fe 20 /Ta, combining ferromagnetic resonance (FMR) and inverse spin Hall effect (ISHE) voltage measurements. We have estimated the effective spin mixing conductance g ↑↓ by analyzing the permalloy (Py) thickness dependence of the FMR linewidth obtaining g ↑↓ = (3.8 ± 0.7) × 10 15 cm −2 and g ↑↓ = (1.3 ± 0.4) × 10 15 cm −2 for Py/Ru and Py/Ta, respectively. Analyzing the Ta thickness depend… Show more

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Cited by 43 publications
(34 citation statements)
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“…So far no spin mixing conductance values have been reported for FeCoSi/Ru bilayer systems in the literature. However, the reported g ↑↓ values for similar ferromagnet/non-magnetic metal bilayer systems such as CoFeB/Pt (4 × 10 15 cm −2 ), 30 NiFe/Ru (3.8 × 10 15 cm −2 ), 28 and CoFe/Pt (4.0 × 10 15 cm −2 ) 31 are very close despite the material differences in each system. Thus we expect the spin mixing conductance of our system to be of the same order and used g ↑↓ ≈ 4.0 × 10 15 cm −2 in our estimate.…”
Section: Fmr Measurement Resultsmentioning
confidence: 89%
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“…So far no spin mixing conductance values have been reported for FeCoSi/Ru bilayer systems in the literature. However, the reported g ↑↓ values for similar ferromagnet/non-magnetic metal bilayer systems such as CoFeB/Pt (4 × 10 15 cm −2 ), 30 NiFe/Ru (3.8 × 10 15 cm −2 ), 28 and CoFe/Pt (4.0 × 10 15 cm −2 ) 31 are very close despite the material differences in each system. Thus we expect the spin mixing conductance of our system to be of the same order and used g ↑↓ ≈ 4.0 × 10 15 cm −2 in our estimate.…”
Section: Fmr Measurement Resultsmentioning
confidence: 89%
“…The significant increase of the effective damping parameter increase for the 4 nm thick film has two potential origins: two-magnon scattering and spin pumping. A rough estimation of the spin pumping contribution to the effective parameter for the 4 nm thick film using equation 28…”
Section: Fmr Measurement Resultsmentioning
confidence: 99%
“…7-9 They were followed by reports on similar observations of pumping into different materials [10][11][12][13] , including prominent semiconductors GaAs 14 , Si 15,16 , Ge 17 , and, most recently, graphene. 18 Experimental results on the electric field generated due to ISHE , E ISHE , are analyzed using the relation E ISHE ∝ J (s) × σ, where J (s)…”
Section: Introductionmentioning
confidence: 98%
“…These effects can be used to estimate microscopic parameters related to the transport properties of FM/ML systems. For example, the spin diffusion length (k SD ), the spin Hall angle (H SH ) and the spin mixing conductance (g "# ) provide a way to determine the spin-to-charge current conversion efficiency in different 5d transition metal elements such as Pt 13,14 or Ta, 15,16 which determines the suitable candidate for technological applications. The strong SOC in these transition metals is responsible for the ISHE, which converts a pure spin current into a transversal charge current according to…”
Section: Introductionmentioning
confidence: 99%