Spin transport properties in TM-doped B38 fullerene/borophene junctions

Khalatbari, H.; Vishkayi, Sahar Izadi; Soleimani, H. Rahimpour

doi:10.1016/j.physb.2021.413284

Cited by 4 publications

(1 citation statement)

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“…Heavy transition metals such as iron (Fe), nicked (Ni), and cobalt (Co) are regarded as important building blocks of based materials, but the use of semiconductors began only in 1990 with the theoretical proposal of a spin filed-effecttransistor by Datta and Das [5]. Then, it has gained wide attention in the application of the semimetallic group-IVA (graphene, silicence, germanene and stanene) and metallic group-IIIA (borophene) materials [6][7][8][9]. Moreover, in transition metal dichalcogenide semiconductor monolayers such as MoS 2 , MoSe 2 , WS 2 , and WSe 2 , the spin splitting effect was explored, which originated from the combination of spinorbit coupling and lack of inversion symmetry [10].…”

Section: Introductionmentioning

confidence: 99%

Vacuum barrier induced large spin polarization, giant magnetoresistance, and pure spin photocurrent in ferromagnetic zigzag graphene nanoribbons

Song¹,

Liu²,

Wei³

et al. 2022

J. Phys. D: Appl. Phys.

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Based on ﬁrst-principle calculations combined with non-equilibrium Green’s function method, we investigate the spin-polarized transport properties of a two-probe device which consists of a vacuum barrier sandwiched between two semi-inﬁnite ferromagnetic zigzag graphene nanoribbons (ZGNRs). It is well known that any vacuum barrier itself is not spin-polarized, and meanwhile, the inﬁnite pristine ferromagnetic ZGNR presents no spin polarization in the transmission function around the Fermi level. However, our computational results indicate that robust large spin polarization is found in the proposed device. More interestingly, giant magnetoresistance up to 3.0 × 108% can be obtained at low bias voltage. Furthermore, the photogalvanic eﬀect (PGE)-induced fully spin-polarized photocurrent or pure spin photocurrent can be generated in such device by illumination with polarized light, depending on the symmetry of structure. Consequently, our results indicate that vacuum barrier may show interesting spin-polarized transport properties in certain systems and should be taken into consideration in the construction of molecular junctions and spintronic devices.

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