Spin-valve magnetoresistive structures based on Co/Tb multilayer films

Svalov, A. V.; Savin, P. A.; Kurlyandskaya, G.V.; Gutiérrez, J.; Vas’kovskiy, V. O.

doi:10.1134/1.1501678

Cited by 9 publications

(11 citation statements)

References 6 publications

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“…In a certain magnetic field region, the structure resistance changes (increases). We note that there are some dif ferences of the results discussed in this paper from the results of [5]: (i) there is no symmetric picture of changes corresponding to changes in the external magnetic field polarity; (ii) strong magnetic fields of conductivity switching; (iii) the transport organic layer is thicker by a factor of 400; (iv) the effect is stronger by eight orders of magnitude.…”

Section: Polymersmentioning

confidence: 45%

“…For example, in [6], at an experimental temperature of 11 K, the conductivity variation pattern is symmetric at the opposite external magnetic field (as in [5]), and the weak effect is observed.…”

Section: Polymersmentioning

confidence: 87%

“…The serious differences of the dependences of the resistance from those of [5,6] are probably associated with the specificity of the band structure of the used material. In thin films of wide band gap polymers such as PDP, an intermediate narrow band of allowed states can arise in the middle of the band gap.…”

Section: Polymersmentioning

confidence: 94%

“…3) with the typical result for an optimized inorganic spin valve multilayer structure [5], i.e., the {Co(1 nm)/Tb(l nm)} 16 /Co (5 nm)/Cu(2.5 nm)/Co(5 nm) heterostructure. In a certain magnetic field region, the structure resistance changes (increases).…”

Section: Polymersmentioning

confidence: 97%

“…In [5] and in most studies of the structures of spin valves such as "current perpendicular to plane," spin dependent tunneling is considered as the main mech anism of spin transport through the interlayer. The authors of [6] at the thickness of the conjugated poly mer interlayer to 250 nm and low temperatures already meet with certain difficulties in explaining the spin transport mechanism and in fact leave the question open.…”

Section: Polymersmentioning

confidence: 99%

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The role of the wide-band-gap polymer layer for the existence of conductivity switching in the valve structure

Лачинов

Воробьева

2012

Phys. Solid State

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428Previously, the possibility of switching the conduc tivity in the metal/polymer/metal asymmetric struc ture containing only one ferromagnetic electrode and a layer of a wide band gap polymer material (poly(diphenylenephthalide), PDP) was detected [1]. It was also shown that the conductivity switching by the magnetic field is associated with partial polariza tion over the spin of charges injected from the ferro magnet [2]. However, the results of [1, 2] do not allow a conclusion on spin transport within the polymer layer. Experiments on the structure such as a spin valve could answer the question on the possibility of spin transport through a rather thick polymer film. In such a structure, the injecting electrode plays the role of a polarizer; the second ferromagnetic electrode serves as an analyzer of spin polarized current carriers. In this case, a change in the magnetization direction in the electrode analyzer should result in modulation of the current flowing in the structure under study.In this context, the objective of this research is to study the possibility of spin transport occurring through a layer of a wide band gap polymer material in an experimental configuration such as the spin valve.The main difference between the samples studied in this work and those used previously [1] is the replacement of the nonmagnetic copper electrode by the ferromagnetic metal Ni electrode. Thus, in this work, we study the "symmetric" ferromagnet/poly mer/ferromagnet structure unlike the "asymmetric" ferromagnet/polymer/non ferromagnetic metal structure previously considered in [1,2]. The elec trode with a large coercivity in the symmetric structure under consideration was fabricated by depositing a nickel layer on an antiferromagnetic Cr layer [3]. The lower two layer chromium/nickel film grown by sequential deposition of these metals on glass in vac uum was characterized in the initial state by a prefer ential direction and increased magnetic rigidity (Fig. 1a). The upper nickel film was a soft magnetic elec trode and had not a preferential direction in the initial state (Fig. 1b). Polymer was deposited in one layer or in two layers to increase the distance for possible spin transfer. The thickness of these structures was no less than 500 nm and to 1.2 μm, respectively. Measure ments were performed at room temperature, magnetic fields were less than 500 mT.Since abrupt changes in the working cell resistance (six-eight orders of magnitude) in the experimental circuit were possible, a circuit with a current generator was used.The external magnetic field could be oriented par allel or perpendicular to the structure plane. Observa Abstract-The effect of electronic switching of the conductivity by a magnetic field lower than 500 mT has been implemented in the spin valve structure in the "current perpendicular to plane" geometry with a trans port layer of a wide band gap polymer to 1200 nm thick. The problem of spin transfer through the polymer layer has been discussed in the model of ballistic charge transport over nanos...

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Section: Polymersmentioning

confidence: 45%

Section: Polymersmentioning

confidence: 87%

Section: Polymersmentioning

confidence: 94%

Section: Polymersmentioning

confidence: 97%

Section: Polymersmentioning

confidence: 99%

See 3 more Smart Citations

The role of the wide-band-gap polymer layer for the existence of conductivity switching in the valve structure

Лачинов

Воробьева

2012

Phys. Solid State

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Structure and magnetoresistive properties of three-layer thin films of spin-valve type

Shkurdoda

Pazukha

Petrenko

et al. 2020

Current Applied Physics

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Wide-range tuning of interfacial exchange coupling between ferromagnetic Au/Co and ferrimagnetic Tb/Fe(Co) multilayers

Frąckowiak

Kuświk

Urbaniak

et al. 2018

Sci Rep

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The ability to perform wide-range tuning of the magnetic field required to switch the magnetization of ferromagnetic layers with perpendicular magnetic anisotropy is of great importance for many applications. We show that, for (Au/Co)2(3) multilayers, this field can be changed from minus several kOe to plus several kOe because of changes to the coupling with a ferrimagnetic multilayer [either (Tb/Fe)6 or (Tb/Co)6] across a Au spacer (either homogeneous 1 nm thick or wedge-shaped). The adjustable parameters are the ratio of sublayer thicknesses of the ferrimagnet and the sequence of layers around the Au spacer. The change of the sequence from Co/Au/Co to Tb/Au/Co is accompanied by both the reduction of the interaction energy and the change of the magnetic field sign necessary to switch the magnetization of ferromagnetic multilayers. For a 1 nm thick Au spacer this fields change from positive (negative) to negative (positive) if the ferrimagnet is dominated by the transition metal (rare earth) as a result of its composition. The characteristic oscillatory behavior of RKKY-like coupling is demonstrated using a system with a wedge-shaped Au spacer.

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Spin-valve magnetoresistive structures based on Co/Tb multilayer films

Cited by 9 publications

References 6 publications

The role of the wide-band-gap polymer layer for the existence of conductivity switching in the valve structure

The role of the wide-band-gap polymer layer for the existence of conductivity switching in the valve structure

Structure and magnetoresistive properties of three-layer thin films of spin-valve type

Wide-range tuning of interfacial exchange coupling between ferromagnetic Au/Co and ferrimagnetic Tb/Fe(Co) multilayers

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