Spintronics of Hybrid Organic–Inorganic Perovskites: Miraculous Basis of Integrated Optoelectronic Devices

Abstract

Hybrid organic–inorganic perovskite (HOP) spintronics aims to make full use of the properties of electron spin. HOP spintronics has recently emerged as a promising field of research because it provides a new precisely manipulable degree of freedom. The flourishing development activity in this field has benefited from the unique intrinsic spin‐related optoelectronic properties of HOPs, which include triplet formation, a large Stark effect, the magneto‐optical effect, polarized light‐related effects, and complex light emission characteristics, which offer the possibility of providing a new way to control the performance of integrated optoelectronic devices through spin interactions between photons and electrons. Along with the continuous improvements in the theoretical research into HOP spintronics, large numbers of novel optoelectronic devices have been proposed and demonstrated experimentally and have shown great potential for fabrication of next‐generation, high‐performance integrated optoelectronic chips. This review provides an overview of the fundamental principles, novel spin‐generated physical effects, and diverse structures of HOP spintronics systems, along with the applications of HOP spintronics in optoelectronic devices, while also undertaking a general review of the remaining challenges and proposing possible development directions that require further study for the application of HOP spintronics to integrated optoelectronic devices.

Organic-to-inorganic structural chirality transfer in a 2D hybrid perovskite and impact on Rashba-Dresselhaus spin-orbit coupling

“…Spin–orbit coupling (SOC) describes a relativistic effect, relevant especially for heavy atoms. Pb-based HOIPs are gaining substantial interest in spintronics owing to a strong SOC induced by the heavy Pb constituent and structural flexibility provided by the organic cation 31 , 32 . In Pb-containing HOIPs, the SOC-induced energy splitting of the Pb-6 p -derived conduction band (CB) is of the order of eV 33 – 35 .…”

Organic Cation Alloying on Intralayer A and Interlayer A’ sites in 2D Hybrid Dion–Jacobson Lead Bromide Perovskites (A’)(A)Pb2Br7

“…13 A recent strategy for fabricating high performance photovoltaic devices is to mix The 2D hybrid perovskites expand the range of properties and possibilities because of their highly diverse chemistry, [24][25][26][27][28][29][30] excellent photo-physical properties 31,32 , and intriguing physical phenomena such as electron/exciton-phonon coupling 33 and Rashba splitting 34 for spintronics. [35][36][37] The reduction in dimensionality from 3D to 2D lends additional flexibility to the crystal lattice and as a result, the tolerance factor limitation that occurs in the 3D perovskite can be somewhat relaxed in 2D perovskite. 38,39 Typical examples are the 2D perovskites which based on the tolerance-"forbidden" cations ethylammonium (EA) 28,40 , isopropylammonium (IPA) 41 and a series of larger A-site cations.…”

Polaron and Spin Dynamics in Organic–Inorganic Lead Halide Perovskite Nanocrystals

“…Organic–inorganic lead halide perovskite (OILHP) nanocrystals (NCs) of the general formula APbX 3 (A = methylammonium (MA + )/formamidinium (FA + )/Cs + /Rb + and X = I/Br/Cl) are extremely interesting for a wide range of applications in electronics, optoelectronics, and quantum information processing. [ 1–6 ] OILHP NCs show low trap density (10 10 cm –3 ) and exceptional defect tolerance even when prepared at room temperature, where a high defect density is unavoidable. [ 7–11 ] Seminal demonstrations of defect tolerance include charge carrier lifetimes of ≈2 µs, long carrier diffusion lengths of ≈10 µm, and high photoluminescence (PL) quantum yield.…”

“…[ 7,11–15 ] These attributes led to extremely efficient solution‐processed cost‐effective solar cells (>25%), low‐threshold lasing, and light‐emitting diodes. [ 2,5,12,16–21 ] Recently demonstrated hot phonon bottleneck helps to establish the potential for hot carrier photovoltaic devices that can break the single‐junction Shockley–Queisser limit for solar cells. [ 22,23 ]…”