Spintronics of nanostructured manganese germanium (MnGe) dilute magnetic semiconductor

Wang, K.L.; Xiu, Faxian; Jacob, Ajey P.

doi:10.1533/9780857091420.4.575

Cited by 2 publications

(1 citation statement)

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“…Many different alloys have been investigated, namely MnFeGe [167], FeGe [168], FeSi [169] and MnGe [170,171]. For information about the material characteristics, we recall about [172]. Spin accumulation in Ge using DMS-based Schottky tunnel contacts was first demonstrated in a Co/FeSi/n-Ge structure [173].…”

Section: Electrical Spin Injection In Gementioning

confidence: 99%

Progress towards Spin-Based Light Emission in Group IV Semiconductors

et al. 2017

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Spin-optoelectronics is an emerging technology in which novel and advanced functionalities are enabled by the synergetic integration of magnetic, optical and electronic properties onto semiconductor-based devices. This article reviews the possible implementation and convergence of spintronics and photonics concepts on group IV semiconductors: the core materials of mainstream microelectronics. In particular, we describe the rapid pace of progress in the achievement of lasing action in the notable case of Ge-based heterostructures and devote special attention to the pivotal role played by optical investigations in advancing the understanding of the rich spin physics of group IV materials. Finally, we scrutinize recent developments towards the monolithic integration on Si of a new class of spin-based light emitting devices having prospects for applications in fields such as cryptography and interconnects.

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