Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. 2004
DOI: 10.1109/vlsit.2004.1345403
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Split-gate NAND flash memory at 120nm technology node featuring fast programming and erase

Cheng-Yuan Hsu
1
,
Chi-Wei Hung
2
,
Da Sung
3
et al.
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