A novel self-aligned highly reliable sidewall split-gate flash memory

Cho, Caleb Yu-Sheng; Chen, Ming‐Jer; Chen, Chiou-Feng; Tuntasood, P.; Fan, Dongyu; Liu, Tseng-Yi

doi:10.1109/ted.2005.863764

Cited by 28 publications

(1 citation statement)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Source-side injection [2] programming is the most promising scheme for increasing injection efficiency without any constraints on the optimization of gate and drain voltages. Recent advancements have successfully demonstrated the low-voltage operations in embedded applications [3][4][5][6]. Asymmetrical split-gate cells are typically adopted to decouple the channel hot electrons from the lateral drain field, while the complex addressing circuitry, enlarged cell size and extra process steps limit the use of such asymmetrical split-gate cells in practical flash technology.…”

Section: Introductionmentioning

confidence: 99%

Source-side injection Schottky barrier flash memory cells

Shih

Yeh

Liang

et al. 2009

Semicond. Sci. Technol.

View full text Add to dashboard Cite

This work presents a novel Schottky barrier flash cell with promising source-side injection programming. The effects of the Schottky barrier on source-side injection programming are demonstrated by two-dimensional device simulations. The unique Schottky barrier at the source/channel interface significantly promotes the amount of source-side hot electrons to provide high injection efficiency at considerably low voltages without compromising between gate and drain biases. The new source-side injection Schottky barrier flash cell, which has a compact floating-gate structure with a metallic source/drain, is proposed for the first time as future flash memory.

show abstract