Source-side injection Schottky barrier flash memory cells

Abstract

This work presents a novel Schottky barrier flash cell with promising source-side injection programming. The effects of the Schottky barrier on source-side injection programming are demonstrated by two-dimensional device simulations. The unique Schottky barrier at the source/channel interface significantly promotes the amount of source-side hot electrons to provide high injection efficiency at considerably low voltages without compromising between gate and drain biases. The new source-side injection Schottky barrier flash cell, which has a compact floating-gate structure with a metallic source/drain, is proposed for the first time as future flash memory.

Enhancement of programming speed on gate-all-around poly-silicon nanowire nonvolatile memory using self-aligned NiSi Schottky barrier source/drain

“…The SiNW channel with a tensile stress enhanced the electron FN tunneling from the SiNW to the SiN storage nodes and obtained a significant V th shift. [29][30][31] IV. SUMMARY In this paper, Schottky barrier source/drain electrodes in GAA silicon NW SONOS cells were evaluated.…”

Drain-induced Schottky barrier source-side hot carriers and its application to program local bits of nanowire charge-trapping memories

“…At positive gate voltages, the gate-controlled field can induce abrupt energy-band bending around the Schottky barriers to conduct electron current and generate strong lateral field, producing significant enhancement of hot-carriers generation. [14][15][16][17][18] Using the fully gatecontrolled Schottky barrier lowering current and associated hot-carriers injection, the Schottky barrier nanowire chargetrapping cells have been successfully operated through the Fowler-Nordheim (FN)-mode scheme for future threedimensional (3D) NAND-type memory applications. [19][20][21][22] However, the fully gate-controlled hot-electrons injection cannot locally program the nanowire cells to operate the multi-bit/cell charge-trapping NOR-type memories 23) because both the source-and drain-sides storage nodes are programmed simultaneously.…”

Schottky Barrier Silicon Nanowire SONOS Memory With Ultralow Programming and Erasing Voltages

“…The unique SB produces a strong enhancement of hot-carrier generation to have a large gate current at relatively low voltages [9]- [11]. Alternatively, a dopant-segregated SB structure is implemented to enhance program speed in FinFET SONOS cells [12], [13].…”

“…In SB cells, strong FN tunneling currents are produced at considerably low gate voltages. Because the SB device has a lower supplying current than a conventional device due to an appreciable SB height, enhanced speed is attributed mainly to the efficient electrical field and hot-carrier generation associated with the Schottky source/drain barrier [9]- [11].…”