Splitting and coupling of lattice modes in the layer compound SnS

Nikolić, P.M.; Mihajlović, P.; Lavrenčič, B. B.

doi:10.1088/0022-3719/10/11/003

Cited by 75 publications

(45 citation statements)

References 5 publications

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“…According to selection rules [33], the presence and frequencies of Raman modes depend on the orientation of the crystal lattice with respect to the direction of the incident and scattered photons. As was shown elsewhere [33,35] for most cases, the A g mode related to bonding in the a-c plane is dominant for both SnS and Sn 2 S 3 phases. Also, in some cases of orientation crystal lattice, the less intensive B 1g , B 2g and B 3g modes could be observed (Table 1) [33,35].…”

Section: Raman Analysissupporting

confidence: 75%

“…As was shown elsewhere [33,35] for most cases, the A g mode related to bonding in the a-c plane is dominant for both SnS and Sn 2 S 3 phases. Also, in some cases of orientation crystal lattice, the less intensive B 1g , B 2g and B 3g modes could be observed (Table 1) [33,35]. Moreover, in the case of Sn 2 S 3 only the A g mode has been observed experimentally [34,44].…”

Section: Raman Analysissupporting

confidence: 75%

“…In order to identify SnS 2 , Sn 2 S 3 and SnS-related modes on Raman spectra, we used reference data about their frequencies in single crystals [33][34][35][36]. However, Raman analysis of polycrystalline thin films can be complicated by shifting and broadening of the peaks compared to those in single crystals due to grain boundaries, extended defects and stresses [37][38][39][40].…”

Section: Raman Analysismentioning

confidence: 99%

See 2 more Smart Citations

Laser-induced SnS2-SnS phase transition and surface modification in SnS2 thin films

Voznyi

Kosyak

Onufrijevs

et al. 2016

Journal of Alloys and Compounds

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Section: Raman Analysissupporting

confidence: 75%

Section: Raman Analysissupporting

confidence: 75%

Section: Raman Analysismentioning

confidence: 99%

See 1 more Smart Citation

Laser-induced SnS2-SnS phase transition and surface modification in SnS2 thin films

Voznyi

Kosyak

Onufrijevs

et al. 2016

Journal of Alloys and Compounds

View full text Add to dashboard Cite

“…Tin sulfide has 21 optical active modes of which 12 are Raman active modes, 7 are infrared active modes and 2 are inactive. According to the reported literature A g , B 2g and B 3g are Raman active modes while B 2u is the infrared active mode of SnS nanostructure [21].these phenomena shows that the as-synthesized nanostructures are promising materials for energy storage applications and solar cells.…”

Section: Resultsmentioning

confidence: 70%

Hydrothermal Synthesis, Characterization and Raman Vibrations of Chalcogenide SnS Nanorods

Ali

Wang

Zafar

et al. 2017

IOP Conf. Ser.: Mater. Sci. Eng.

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Abstract:One dimensional nanostructure have been considered promising candidates for optoelectronics and energy storage devices. However, cost-effective approach for large-scale production using wet chemical method is still a big challenge. Here, single crystalline monodispersed stannous sulfide (SnS) nanorods in the range of 400nm to micrometer have been synthesized using solution-based method. The morphology of the prepared nanorods was controlled by tuning the parameters, including the concentrations of reagents, reaction time and temperature. The resultant nanorods were characterized using XRD, FESEM, and Raman spectroscopy techniques. Four vibrational modes 141 cm -1 , 165.3 cm -1 , 218 cm -1 and 289.6 cm -1 were observed by Raman spectroscopy, which is consistent with nano orthorhombic SnS herzenbergite phase.

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“…For SnS 21 optical phonons modes are detected of which 12 are Raman active modes (4Ag, 2B1g, 4B2g and 2B3g) [15]. …”

Section: X-ray Diffraction (Xrd) Analysismentioning

confidence: 99%

Substrate influences on the properties of SnS thin films deposited by chemical spray pyrolysis technique for photovoltaic applications

Sall

Mollar

2016

J Mater Sci

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The present paper reports on Tin Monosulphide (SnS) thin films elaborated by the Chemical Spray Pyrolysis (CSP) technique onto various substrates as simple glass, ITO-and Mo-coated glass in order to study the influence of substrates on the physical and chemical properties of SnS thin films. The structural analysis revealed that all films are crystallized in orthorhombic structure with (111) as the sole preferential direction without secondary phases. In addition, films prepared onto pure glass exhibits better crystallization compared to films deposited onto coated-glass substrates. Raman spectroscopy analysis confirms the results obtained from XRD with modes corresponding well to SnS single crystal orthorhombic ones (47, 65, 94, 160, 186, and 219 cm -1 ) without any additional parasite secondary phase like Sn 2 S 3 or SnS 2 . FESEM revealed that all films have cornflake like particles surface morphology and EDS analysis showed the presence of sulphur and tin with nearly stoichiometric ratio in films deposited onto pure glass. High surface roughness and large grains have been observed in film deposited onto glass. From optical spectroscopy it is inferred that band gap energy of SnS/glass and SnS/ITO were 1.64 eV and 1.82 eV, respectively.2

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Splitting and coupling of lattice modes in the layer compound SnS

Cited by 75 publications

References 5 publications

Laser-induced SnS2-SnS phase transition and surface modification in SnS2 thin films

Laser-induced SnS2-SnS phase transition and surface modification in SnS2 thin films

Hydrothermal Synthesis, Characterization and Raman Vibrations of Chalcogenide SnS Nanorods

Substrate influences on the properties of SnS thin films deposited by chemical spray pyrolysis technique for photovoltaic applications

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