advances in the generation, control, and detection of spin currents, and the chargespin interconversion plays a fundamental role in these processes. [2][3][4] The interconversion between charge and spin currents relies on two phenomena: spin Hall (SHE) and inverse spin Hall (ISHE) effects that allow the conversion of a charge current in a transverse spin current and vice versa in materials with a large spin-orbit interaction (SOI). [2][3][4][5] The basic system to study these processes is a normal metal (NM)/ magnetic material (M) bilayer being the spin transport across the NM/M interface governed by the complex spin-mixing conductance G ↑↓ = G r + iG i . [6] When the spin current reaches the NM/M interface, it can be absorbed or reflected depending on the relative orientation between the magnetization, M, of the M material and the spin polarization, σ, of the spin current due to the different torques exerted when σ and M are noncollinear (G r and G i are associated to damping-like and field-like torques, respectively). [7] In addition, the spin-sink conductance (G S ), [8] is related to the spin-flip scattering at the interface when σ is collinear to M. However, other interfacial effects, for instance, magnetic proximity effect, [9] the Rashba-Edelstein effect, [10] or the anomalous Nernst effect, [11] may also play a role on the spin current transport across interfaces. Since the development of spin devices necessarily involves the flow of spin currents, the importance of interfaces and their proper characterization is evident. [12] Thus, having the right materials and the right characterization techniques is of paramount importance for the development of spintronics. Fortunately, an ideal technique is available for the study of spin transport through NM/M interfaces, namely spin Hall magnetoresistance (SMR). SMR arises from a nonequilibrium proximity effect caused by the simultaneous action of the SHE and ISHE. [7,13] Being sensitive only to the magnetic properties of the topmost atomic layers of the magnetic material, M, close to the NM/M interface, [14,15] SMR allows to study interfacial magnetic properties of magnetic materials in contact to NM via magnetotransport experiments and to determine important parameters, such as spin diffusion length, λ sd , and the spin Hall angle, Θ SH , of different NM layers, or the different spin conductances. SMR has been used to study magnetic structures in several magnetic insulating materials including ferrimagnetic, [13,16,17] and antiferromagnetic orderings. [18,19] Moreover, SMR has demonstrated to Spin Hall magnetoresistance (SMR) is used to study interfacial magnetic features in La 2 CoMnO 6 (LCMO)/Pt bilayers. LCMO is a ferromagnetic insulator with a Curie temperature T c = 250 K and a strong magnetic anisotropy that can be tuned by microstructural strain. However, SMR measurements do not show any dependence on the strained state of the LCMO films. In addition, contrary to what may be expected, SMR signal persists above T C exhibiting a strong magnetic field depend...