Spontaneous nanostructure formation in GaAsBi alloys

Tait, C. Ryan; Yan, Lifan; Millunchick, Joanna Mirecki

doi:10.1016/j.jcrysgro.2018.04.026

Cited by 24 publications

(14 citation statements)

References 26 publications

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“…Figure 7 shows a mapping of the reported substrate temperatures and epilayer Bi contents from the literature. [ 1,10,36,37,89–103 ] Most of the growth effort has been concentrated on relatively low (<10%) Bi contents and relatively high (>300 °C) growth temperatures, although some groups have targeted lower growth temperatures and higher Bi contents. The hashed area in Figure 7 is not a theoretical limit, rather it is simply a guide to the eye.…”

Section: Prospects For Improving Mbe Growthmentioning

confidence: 99%

“…The highest Bi incorporation efficiencies are found near the onset of Bi droplets, [ 111 ] which is unsurprising as the Bi droplets act to remove Bi from the surface. [ 96,108,111,114–118 ] Due to the mobility of Bi droplets, they can give rise to Bi‐poor nanostructures within the GaAsBi matrix. [ 96 ] Ga droplets, on the other hand, appear to promote Bi incorporation via a vapor–liquid–solid mechanism (see the Section 3.6).…”

Section: Prospects For Improving Mbe Growthmentioning

confidence: 99%

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GaAsBi: From Molecular Beam Epitaxy Growth to Devices

Richards

Bailey

Liu

et al. 2021

Physica Status Solidi (b)

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GaAsBi has been researched as a candidate material for optoelectronic devices for around two decades. Bi‐induced localized states induce a rapid rising of the valence band edge through a band anticrossing interaction, which has a profound effect on the bandgap and the spin–orbit splitting. The band engineering possible, even with just a few percent bismuth, makes GaAsBi an attractive material for THz emitters, telecommunication lasers, and low noise photodetectors, among other devices. There has been substantial progress in some of these areas; however, progress toward many of the potential applications of GaAsBi has been hindered by device quality issues, brought about by the low substrate temperatures necessary for the growth of GaAsBi with sufficiently large Bi fractions. This review, presents an overview of the applications for which GaAsBi has been advocated and the key results in these areas. The molecular beam epitaxy growth and postgrowth processing of GaAsBi are then explored as well as the novel techniques that have been suggested to improve material quality.

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Section: Prospects For Improving Mbe Growthmentioning

confidence: 99%

Section: Prospects For Improving Mbe Growthmentioning

confidence: 99%

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

Richards

Bailey

Liu

et al. 2021

Physica Status Solidi (b)

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“…Considerable attention has been paid to the molecular beam epitaxy (MBE) growth conditions necessary to incorporate significant Bi fractions into GaAs, with up to 22% incorporation achieved using low growth temperatures and low As to Ga flux ratios [8]. This kind of unconventional growth regime can lead to the formation of anti-site defects and Bi clusters [9][10][11], whose effect on GaAsBi diode characteristics is, as yet, unclear.…”

Section: Introductionmentioning

confidence: 99%

Temperature and band gap dependence of GaAsBi p-i-n diode current–voltage behaviour

Richards¹,

Harun²,

Nawawi³

et al. 2021

J. Phys. D: Appl. Phys.

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The dark current characteristics of two series of bulk GaAsBi p-i-n diodes are analysed as functions of temperature and band gap. Each temperature dependent measurement indicates that recombination current dominates in these devices. The band gap dependence of the dark currents is also consistent with recombination dominated current for the devices grown at a common growth temperature, indicating that the presence of Bi does not directly adversely affect the dark currents. However, the devices grown at different growth temperatures exhibit a faster increase in dark current with decreasing device band gap, suggesting that a reduced growth temperature causes a reduction in minority carrier lifetime.

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“…III-V semiconductor alloys containing Bi have recently attracted much attention due to their properties related to large bandgap reduction with increasing Bi content and large spin-orbit bowing [1]. Among them, GaAs 1−x Bi x alloys have unusual and unique physical properties and thus these alloys provide potential applications for fundamental physics and for a wide variety of devices in telecommunication, solar cells, spintronics, photovoltaics and laser diodes operating in 1.3 µm to 1.6 µm spectral range with improved operational efficiency and temperature sensitivity [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

Influence of Bi on dielectric properties of GaAs_1−xBi_x alloys

Yakut

Bozoglu

Deǧer

et al. 2019

Materials Science-Poland

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Pure GaAs and GaAs 1−x Bi x alloys with different Bi ratios (1 %, 2.5 %, 3.5 %) fitted with silver contacts were measured with a dielectric spectroscopy device. Dielectric characterization was performed at room temperature in the frequency range of 0.1 Hz to 1 MHz. GaAs exhibits three relaxation regions corresponding to space-charge, dipolar and ionic polarizations in sequence with increasing frequency while GaAs 1−x Bi x samples show only a broad dipolar polarization in the same frequency range. This result proves the filling of the lattice with Bi through making a new bonding reducing the influence of ionic polarization. This finding supports the previous results concerning optical properties of GaAs 1−x Bi x , presented in the literature.

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Spontaneous nanostructure formation in GaAsBi alloys

Cited by 24 publications

References 26 publications

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

Temperature and band gap dependence of GaAsBi p-i-n diode current–voltage behaviour

Influence of Bi on dielectric properties of GaAs_1−xBi_x alloys

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Spontaneous nanostructure formation in GaAsBi alloys

Cited by 24 publications

References 26 publications

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

Temperature and band gap dependence of GaAsBi p-i-n diode current–voltage behaviour

Influence of Bi on dielectric properties of GaAs1−xBix alloys

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Influence of Bi on dielectric properties of GaAs_1−xBi_x alloys