Compositional inhomogeneities in III-V alloys heavily influence the device performance. This work presents evidence for Ga droplets inducing inhomogeneities in the Bi composition, which we propose is due to a variation in the Ga flux across the surface. These inhomogeneities may be manipulated through the use of growth interrupts, which eliminate the buildup of Ga at the growth front.

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Bi incorporation in GaAs and GaSb has exhibited some promising properties allowing for potential new materials operating in the infrared regime. The growth of these materials has proven difficult, often leading to surfaces covered in droplets or nonuniformity in the composition. We propose a new kinetic model to capture the dynamics of incorporation and droplet formation in the growth of these alloys. The model accurately predicts trends found experimentally. Furthermore, the model shows that compositional nonuniformity arises due to a reduction in the incorporation rate of Bi caused by the nucleation of droplets.