The effect of III:V ratio on compositional and microstructural properties of GaAs1-xBix (0 0 1)

Carter, B.A.; Caro, V.; Li, Yue; Tait, C. Ryan; Millunchick, Joanna Mirecki

doi:10.1016/j.jcrysgro.2020.125815

Cited by 7 publications

(7 citation statements)

References 28 publications

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“…The regimes in which these four conditions are observed (at a growth temperature of 325 °C) are shown in Figure 9 . [ 111 ] A V:III atomic flux ratio <1 promotes Ga droplets due to the low rate of surface Ga desorption. [ 92,104,105,112 ] Bi droplets are observed when the rate of Bi deposition exceeds the sum of the Bi incorporation and desorption rates.…”

Section: Prospects For Improving Mbe Growthmentioning

confidence: 99%

“…The highest Bi incorporation efficiencies are found near the onset of Bi droplets, [ 111 ] which is unsurprising as the Bi droplets act to remove Bi from the surface. [ 96,108,111,114–118 ] Due to the mobility of Bi droplets, they can give rise to Bi‐poor nanostructures within the GaAsBi matrix. [ 96 ] Ga droplets, on the other hand, appear to promote Bi incorporation via a vapor–liquid–solid mechanism (see the Section 3.6).…”

Section: Prospects For Improving Mbe Growthmentioning

confidence: 99%

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GaAsBi: From Molecular Beam Epitaxy Growth to Devices

Richards

Bailey

Liu

et al. 2021

Physica Status Solidi (b)

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GaAsBi has been researched as a candidate material for optoelectronic devices for around two decades. Bi‐induced localized states induce a rapid rising of the valence band edge through a band anticrossing interaction, which has a profound effect on the bandgap and the spin–orbit splitting. The band engineering possible, even with just a few percent bismuth, makes GaAsBi an attractive material for THz emitters, telecommunication lasers, and low noise photodetectors, among other devices. There has been substantial progress in some of these areas; however, progress toward many of the potential applications of GaAsBi has been hindered by device quality issues, brought about by the low substrate temperatures necessary for the growth of GaAsBi with sufficiently large Bi fractions. This review, presents an overview of the applications for which GaAsBi has been advocated and the key results in these areas. The molecular beam epitaxy growth and postgrowth processing of GaAsBi are then explored as well as the novel techniques that have been suggested to improve material quality.

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Section: Prospects For Improving Mbe Growthmentioning

confidence: 99%

Section: Prospects For Improving Mbe Growthmentioning

confidence: 99%

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

Richards

Bailey

Liu

et al. 2021

Physica Status Solidi (b)

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“…During dilute bismide growth, Bi droplets were sometimes observed at higher Bi fluxes. [ 30 ] Therefore, these large islands are thought to be related to the Bi droplets. The Bi concentration and surface flatness are in a tradeoff relationship with the growth temperature.…”

Section: Resultsmentioning

confidence: 99%

Growth of InPBi on InP(311)B Substrate by Molecular Beam Epitaxy

Akahane

Matsumoto

Umezawa

et al. 2021

Physica Status Solidi (a)

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The growth of InPBi by molecular beam epitaxy on an InP(311)B substrate is investigated. Bi atoms are incorporated into the samples grown at or below 350 °C. A Bi concentration of up to 5% is estimated by X‐ray diffraction and secondary mass spectroscopy measurements. Although the surface roughness increased with decreasing growth temperature and at a high Bi flux, Bi atoms are found to have surfactant effects on the surface flatness of the samples grown at a low Bi flux.

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“…The regimes in which these four conditions are observed (at a growth temperature of 325 °C) are shown in Figure 9. [113] A V:III atomic flux ratio < 1 promotes Ga droplets due to the low rate of surface Ga desorption. [94,106,107,114] Bi droplets are observed when the rate of Bi deposition exceeds the sum of the Bi incorporation and desorption rates.…”

Section: Bi On a Growing Surfacementioning

confidence: 99%

“…[115] Bi droplet formation can also be precipitated by Ga droplet formation. [113] Figure 9. The growth parameters under which surface droplets are observed at 325 °C.…”

Section: Bi On a Growing Surfacementioning

confidence: 99%

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

Richards

Bailey

Liu

et al. 2022

Physica Status Solidi (b)

View full text Add to dashboard Cite

GaAsBi has been researched as a candidate material for optoelectronic devices for around two decades. Bi-induced localized states induce a rapid rising of the valence band edge through a band anti-crossing interaction, which has a profound effect on the band gap and the spin orbit splitting. The band engineering possible, even with just a few percent bismuth, makes GaAsBi an attractive material for THz emitters, telecommunication lasers, and low noise photodetectors, among other devices. There has been substantial progress in some of these areas; however, progress towards many of the potential applications of GaAsBi has been hindered by device quality issues, brought about by the low substrate temperatures necessary for the growth of GaAsBi with sufficiently large Bi fractions. In this review, we present an overview of the applications for which GaAsBi has been advocated and the key results in these areas. We then explore the molecular beam epitaxy growth and post-growth processing of GaAsBi and the novel techniques that have been suggested to improve material quality. IntroductionReceived: ((will be filled in by the editorial staff))Revised: ((will be filled in by the editorial staff))

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The effect of III:V ratio on compositional and microstructural properties of GaAs1-xBix (0 0 1)

Cited by 7 publications

References 28 publications

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

Growth of InPBi on InP(311)B Substrate by Molecular Beam Epitaxy

GaAsBi: From Molecular Beam Epitaxy Growth to Devices

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