Sputter-induced cone and filament formation on InP and AFM tip shape determination

Seah, M. P.; Spencer, Steve J.; Cumpson, P. J.; Johnstone, J. E.

doi:10.1002/1096-9918(200011)29:11<782::aid-sia929>3.0.co;2-1

Cited by 18 publications

(13 citation statements)

References 34 publications

(25 reference statements)

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“…The effective atomic mass, M 2 , is derived similarly but Malherbe notes that semiconductors such as InP, with widely different masses, would not be a favourable case for this approach. Indeed, InP rapidly develops an interesting surface structure with In regions that grossly change the nature of the surface and hence the yield [15]. Such aspects are beyond normal calculations for sputtering yields.…”

Section: Sputtering Yields For Compoundsmentioning

confidence: 99%

“…where 0 m 0.2 and where U S A and U S B are the energies to remove A and B atoms from the compound surface. There are many other models; however, Malherbe and Odendaal [25] find that Sigmund's model of equation (15) is the best description for the 13 compound semiconductors that they analysed with m optimized at 0.145. For GaAs, the ratio K = (X S B /X S A )/(X B /X A ) was found, at 0.82, to be close to the predicted value of 0.725 [25].…”

Section: Sputtering Yields For Compoundsmentioning

confidence: 99%

“…If, in equation (15), m is set to zero, then from equations ( 14) and ( 15) we get Anders and Urbassek's [26] result Combining equations ( 16), ( 17) and ( 18), together with X S A + X S B = 1 and X A + X B = 1, leads to an expression for X S A :…”

Section: Sputtering Yields For Compoundsmentioning

confidence: 99%

“…Even if one could start with a clean stoichiometric sample, this preferential sputtering is well established after removing a few monolayers, although full equilibrium of the altered region may require significantly more sputtering. After further sputtering, physical structures may appear with their own unique compositions [15]. These will not be considered here.…”

Section: Introductionmentioning

confidence: 99%

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Sputtering yields of compounds using argon ions

Seah¹,

Nunney²

2010

J. Phys. D: Appl. Phys.

125

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Abstract. An analysis is made of published sputtering yield data for compounds using argon primary ions at normal incidence to evaluate the validity of simple predictive equations. These are sputtering yields at dynamical equilibrium. First, two archetypal compounds are analysed: GaAs with constituent elements of similar atomic number and weak preferential sputtering, and Ta 2 O 5 with constituent elements of widely separate atomic number and strong preferential sputtering. The agreements of the sputtering yields predicted by the semi-empirical linear cascade theory are excellent when the appropriate parameters are interpolated, rather than using an average atomic number. The effect of preferential sputtering is included within the framework of the simple pair-bond theory. The average ratios of the data to the initial predictions for GaAs and Ta 2 O 5 are 1.01 ± 0.06 and 1.00 ± 0.07, respectively. Extension of this analysis to a range of oxides shows that the heat of reaction of the oxidation process needs inclusion. It is here that the effect of preferential sputtering can lead to an expansion of the uncertainties. SiO 2 is often used as a reference material and so the published yield data are analysed in detail. These show an extremely broad scatter and so new experimental data are measured. These new results are in the upper range of previous data and correlate with the semiempirical theory with a scatter of only 9%. These correlations show that the semi-empirical linear cascade theory is excellent for predicting the energy dependence of the yield and can be excellent for absolute yields where the compound heat of formation is low.

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Section: Sputtering Yields For Compoundsmentioning

confidence: 99%

Section: Sputtering Yields For Compoundsmentioning

confidence: 99%

Section: Sputtering Yields For Compoundsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Sputtering yields of compounds using argon ions

Seah¹,

Nunney²

2010

J. Phys. D: Appl. Phys.

125

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“…The large area and 3D nature of the substrate-TI interface causes phonon scattering, minimizing k, while the topologically protected interface and surface states maintain high σ. Many groups have investigated nanostructuring of solid surfaces by ion-beam-induced sputtering, [10][11][12][13] and we adopt the same approach here.…”

Section: Introductionmentioning

confidence: 99%

Bulk and Surface Electrical Properties of BiSb on Flat and Ion‐Beam Nano‐Patterned InP Substrates

Elhoussieny,

Rehaag,

Bell

2023

Physica Status Solidi (b)

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One route to the improvement of thermoelectric material performance is nano‐structuring. Here, BiSb thin films have been grown by molecular beam epitaxy on two types of InP(001) substrate: flat epiready wafer, and nano‐patterned by ion bombardment and annealing (IBA). The effects of IBA on InP substrate are presented, and the structural and electrical properties of the BiSb films are measured. BiSb films on flat substrates are highly textured with (003) orientation, while films on IBA‐patterned substrates are less well ordered with mainly (012) orientation. A simple calculation method for non‐planar Hall measurements is proposed to explain the electrical conduction in rough films. The effects of BiSb film texture, roughness and thickness on carrier density and mobility are provided. Sheet carrier density is independent of thickness at 77 K, which suggests conduction via surface states. Topological protection of such states may support nano‐patterning as a route to reducing thermal conductivity while maintaining electrical conductivity.This article is protected by copyright. All rights reserved.

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An accurate semi‐empirical equation for sputtering yields I: for argon ions

Seah¹,

Clifford²,

Green³

et al. 2005

Surface & Interface Analysis

Self Cite

117

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An analysis has been made of the historical data for argon ion sputtering yields of 28 mono-elemental solids in the energy range 250-10 000 eV to develop an improved semi-empirical formula based on Matsunami et al.'s and Yamamura and Tawara's formulations. The best result is found if an essential component involving the target density is included in Matsunami et al.'s approach. The scatter between the predictions and the experimental data is reduced to 9.0% by generating an analytical expression for the term Q that requires none of the target-specific numbers from special look-up tables of the type used by Matsunami et al. and Yamamura and Tawara. For elements other than the 34 elements for which Q values are tabulated, the new Q values range up to a factor of 5 from the default value that they recommend.The predictions are tested by a new method for determining sputtering yields using atomic force microscopy to measure very small crater volumes sputtered in ultrahigh vacuum. Here, 26 mono-elemental targets were studied using a 5 keV argon ion beam set at 45• to the surface normal. The effect of the angle of incidence is evaluated best using Yamamura et al.'s angular equations for this contribution. Results for Sb, Te and Bi indicate a significantly higher sputtering yield than expected. This is thought to arise from the high content of polyatomic groups associated with the low sublimation energies for such clusters in the pure elements of groups V-B and VI-B of the Periodic

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Sputter-induced cone and filament formation on InP and AFM tip shape determination

Cited by 18 publications

References 34 publications

Sputtering yields of compounds using argon ions

Sputtering yields of compounds using argon ions

Bulk and Surface Electrical Properties of BiSb on Flat and Ion‐Beam Nano‐Patterned InP Substrates

An accurate semi‐empirical equation for sputtering yields I: for argon ions

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