Sputter-Metallization-Induced Electronic Defects in Thermal SiO2

Alexandrova, S.; Szekeres, A.

doi:10.1002/1521-396x(200110)187:2<499::aid-pssa499>3.0.co;2-j

Cited by 6 publications

(4 citation statements)

References 26 publications

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“…Although the nature of interface traps is doubtless dependent on intricate microstructural details of the interaction between the semiconducting and dielectric layers, the interface trap density can be qualitatively understood from a chemical perspective (Figure ). It is known that, in the absence of special surface modifications, Bare substrates exhibit an interface trap density of ∼10 12 cm -2 which is principally attributed to interfacial chemical functionalities/species such as Si−OH, in conjunction with adsorbed H 2 O, and adventitious carbon contamination. , Such chemical defects can affect charge transport by deep-trapping/doping and/or by scattering carriers at the semiconductor−dielectric interface, and this effect is reflected in device performance parameters. Such interfacial effects are important in organic semiconductor-based devices since the charge transport process is believed to occur within the very first few semiconducting layers in proximity to the gate dielectric .…”

Section: Discussionmentioning

confidence: 99%

Gate Dielectric Chemical Structure−Organic Field-Effect Transistor Performance Correlations for Electron, Hole, and Ambipolar Organic Semiconductors

et al. 2006

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This study describes a general approach for probing semiconductor-dielectric interfacial chemistry effects on organic field-effect transistor performance parameters using bilayer gate dielectrics. Organic semiconductors exhibiting p-/n-type or ambipolar majority charge transport are grown on six different bilayer dielectric structures consisting of various spin-coated polymers/HMDS on 300 nm SiO(2)/p(+)-Si, and are characterized by AFM, SEM, and WAXRD, followed by transistor electrical characterization. In the case of air-sensitive (generally high LUMO energy) n-type semiconductors, dielectric surface modifications induce large variations in the corresponding OTFT performance parameters although the film morphologies and microstructures remain similar. In marked contrast, the device performance of air-stable n-type and p-type semiconductors is not significantly affected by the same dielectric surface modifications. Among the bilayer dielectric structures examined, nonpolar polystyrene coatings on SiO(2) having minimal gate leakage and surface roughness significantly enhance the mobilities of overlying air-sensitive n-type semiconductors to as high as approximately 2 cm(2)/(V s) for alpha,omega-diperfluorohexylcarbonylquaterthiophene polystyrene/SiO(2). Electron trapping due to silanol and carbonyl functionalities at the semiconductor-dielectric interface is identified as the principal origin of the mobility sensitivity to the various surface chemistries in the case of n-type semiconductors having high LUMO energies. Thiophene-based n-type semiconductors exhibiting similar film morphologies and microstructures on various bilayer gate dielectrics therefore provide an incisive means to probe TFT performance parameters versus semiconductor-dielectric interface relationships.

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Section: Discussionmentioning

confidence: 99%

Gate Dielectric Chemical Structure−Organic Field-Effect Transistor Performance Correlations for Electron, Hole, and Ambipolar Organic Semiconductors

et al. 2006

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“…The results suggest that OA as the stabilizing ligand is effectively bound to surfaces of the inorganic nanoparticle cores and nearly no free OA is present in the nanoparticle suspensions. It has been shown that alkyl chains on modified dielectric surfaces can substantially reduce the interfacial trappes-state density ,, , which is principally attributed to interfacial chemical functionalities/species such as Si−OH for SiO 2 dielectrics, in conjunction with adsorbed H 2 O and adventitious carbon contamination , . It has been found that silanol groups cannot be completely removed by such self-assembled alkyl layers .…”

Section: Resultsmentioning

confidence: 99%

Solution-Prepared Hybrid-Nanoparticle Dielectrics for High-Performance Low-Voltage Organic Thin-Film Transistors

Cai

et al. 2009

ACS Appl. Mater. Interfaces

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Oleic acid capped barium strontium titanate (OA-BST) nanoparticles were synthesized for solution-prepared dielectrics in organic thin-film transistors (OTFTs). The as-synthesized nanoparticles were well-dispersed in organic solvents to deposit very homogeneous dielectric films by direct spin coating. Bottom-gate pentacene TFTs fabricated using these nanoparticle dielectric films showed high mobilities of 1-2 cm(2) V(-1) s(-1) with on/off ratios of 10(3) under a low driven voltage of -2.5 V. Top-gate poly(3,3'''-didodecylquaterthiophene) (PQT-12) TFTs with nanoparticle dielectrics also exhibited a low-voltage operation (-5 V) performance with mobilities of 0.01-0.1 cm(2) V(-1) s(-1) and on/off ratios of 10(3)-10(4). Detailed studies on the gate voltage-dependent mobility of the devices showed that only a low gate electric field needed to achieve the saturated mobility for the OA-BST-based pentacene OTFTs could be attributed to the low trapped-state densities (<3.9 x 10(11) cm(-2)) at the dielectric/semiconductor interfaces for these devices.

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“…Shifts in V FB , which are ideally zero at room temperature, ensue for Pd and Au gates from differences in their respective work functions ͑0.04 V͒, as well as dielectric traps and surface states promoted 16 by the sputtering process,…”

Section: Experimental Details and Proceduresmentioning

confidence: 99%

Bias dependent response reversal in chemically sensitive metal oxide semiconductor capacitors

Lombardi

Aragón

2008

Journal of Applied Physics

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NO 2 sensitive Au gate metal-oxide-semiconductor capacitorsEffects of anneals in ammonia on the interface trap density near the band edges in 4H-silicon carbide metaloxide-semiconductor capacitors Current oscillations in thin metal-oxide-semiconductor structures observed by ballistic electron emission microscopy J.Conditions for reversal of the voltage shift in chemically sensitive metal oxide semiconductor capacitors are surveyed with the pulsed illumination technique in Si/ SiO 2 / Me 0 capacitors, with annular Pd and Au gates under controlled H 2 in N 2 and NO 2 in synthetic air stimuli, respectively. The polarity of the response is bias dependent. Above the threshold voltage, negative voltage shifts ensue from positive charges accumulated on the gate-dielectric interface for donor stimuli such as H 2 , whereas positive shifts indicate negative charge accumulation for acceptors such as NO 2 . Below the threshold voltage, the necessary charge compensation can be satisfied by proportional changes in the semiconductor-gate interface state population, which induce chemical shifts of opposite polarity.

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Sputter-Metallization-Induced Electronic Defects in Thermal SiO2

Cited by 6 publications

References 26 publications

Gate Dielectric Chemical Structure−Organic Field-Effect Transistor Performance Correlations for Electron, Hole, and Ambipolar Organic Semiconductors

Gate Dielectric Chemical Structure−Organic Field-Effect Transistor Performance Correlations for Electron, Hole, and Ambipolar Organic Semiconductors

Solution-Prepared Hybrid-Nanoparticle Dielectrics for High-Performance Low-Voltage Organic Thin-Film Transistors

Bias dependent response reversal in chemically sensitive metal oxide semiconductor capacitors

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