1990
DOI: 10.1016/s0040-6090(05)80008-2
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Sputtered alloy coatings by codeposition: Effects of bias voltage

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Cited by 18 publications
(3 citation statements)
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“…Concerning the deposition rate variation, our result is in good agreement with several studies. [21][22][23][24][25][26] For instance, [26] in the case of Cr-Mo-Si-N coatings prepared on Si wafers by a hybrid system combining arc ion plating and magnetron sputtering, the deposition rate decreased from 2.2 to 1.6 μm/h when the negative bias voltage changed from 0 to 400 V. Authors explained this variation by a resputtering effect of a part of the coating. Whereas, in another study, [27] it has been observed that the deposition rate of TiN films deposited by RF reactive sputtering decreased from 0.17 to 0.15 nm/s when the negative bias voltage changed from 0 to 150 V and then remained almost constant for higher voltage values.…”
Section: Measurement Of Critical Loadmentioning
confidence: 99%
“…Concerning the deposition rate variation, our result is in good agreement with several studies. [21][22][23][24][25][26] For instance, [26] in the case of Cr-Mo-Si-N coatings prepared on Si wafers by a hybrid system combining arc ion plating and magnetron sputtering, the deposition rate decreased from 2.2 to 1.6 μm/h when the negative bias voltage changed from 0 to 400 V. Authors explained this variation by a resputtering effect of a part of the coating. Whereas, in another study, [27] it has been observed that the deposition rate of TiN films deposited by RF reactive sputtering decreased from 0.17 to 0.15 nm/s when the negative bias voltage changed from 0 to 150 V and then remained almost constant for higher voltage values.…”
Section: Measurement Of Critical Loadmentioning
confidence: 99%
“…The outstanding corrosion resistance of niobium is commonly considered to stem from a stable niobium oxide passive film developed on the surface. Therefore, its corrosion behavior mainly depends on the nature and stability of the oxide film [16,17]. Studies have shown that the passive film developed on niobium surface is an n-type semiconductor [18,19].…”
Section: Introductionmentioning
confidence: 99%
“…This is because their disordered atomic arrangements contribute to various properties different from those of regular crystalline metals [1,2]. Besides all the well-known processes such as rapid quenching and mechanical alloying, co-deposition of two or more elements is also known to be effective in producing alloys with near-amorphous structure [3,4,5]. More interestingly, the structure of these films is expected to be dense and boundary-free, leading to the improved performance of thin film that is otherwise impaired by its porous columnar grains.…”
Section: Introductionmentioning
confidence: 99%