Sputtered boron indium oxide thin-film transistors

Stewart, Kevin A.; Gouliouk, Vasily; Keszler, Douglas A.; Wager, John F.

doi:10.1016/j.sse.2017.08.004

Cited by 20 publications

(10 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…These results show an improved performance compared with those reported in other TFTs technologies [15][16][17][18][19][20][21][22]. In [16], mobilities of 0.83 cm 2 /Vs for room temperature sputtered Ga-SnO TFTs were reported.…”

Section: Resultssupporting

confidence: 53%

“…In [16], mobilities of 0.83 cm 2 /Vs for room temperature sputtered Ga-SnO TFTs were reported. In [17], electron mobilities close to 10 cm 2 /Vs were reported for boron indium oxide TFTs with thermal annealing of 200 • C. In [18], electron mobilities below 10 cm 2 /Vs were reported for Li-N doped ZnO TFT annealed at 300 • C. Also, an electron mobility of 8 cm 2 /Vs was reported for room temperature IGZO TFTs [19]. In [20], the electron mobility reported was close to 10 cm 2 /Vs for zinc oxynitride TFTs deposited at 50 • C, and annealed at 350 • C. The electrical performance obtained is better than that reported previously in Zn 3 N 2 TFTs on silicon wafers [7].…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Characterization of high mobility inverted coplanar Zinc Nitride Thin-film Transistors

Dominguez

Pau²,

Obregon³

et al. 2018

Rev. Mex. Fís.

View full text Add to dashboard Cite

In this work, high mobility TFTs based on zinc nitride (Zn3N2) sputtered at room temperature using spin-on glass (SOG) as gate dielectric are presented. The inverted coplanar structure is used for the Zn3N2 TFTs. The devices exhibit an on/off-current ratio of 106 and a subthreshold slope of 0.88 V/decade. The extracted field-effect mobility was 15.8 cm2/Vs which is among the highest reported for Zn3N2 TFTs. In addition, n-type MOS capacitors were fabricated and characterized by capacitance – voltage and capacitance – frequency measurements to evaluate the dielectric characteristics of the SOG film.

show abstract

Section: Resultssupporting

confidence: 53%

Section: Resultsmentioning

confidence: 99%

Characterization of high mobility inverted coplanar Zinc Nitride Thin-film Transistors

Dominguez

Pau²,

Obregon³

et al. 2018

Rev. Mex. Fís.

View full text Add to dashboard Cite

show abstract

“…The E g of In-B-O film with 0, 2, 5, 10 and 15% B is 3.42, 3.55, 3.56, 3.58 and 3.65 eV, respectively. The enhancement of E g is attributed to bandgap of B 2 O 3 (8.0 eV) being larger than that of In 2 O 3 (~3.61 eV) [ 14 ]. In addition, the oxygen vacancy defects in the oxide thin film can generate localized states in the bandgap, resulting in a decrease in the bandgap [ 28 , 29 ].…”

Section: Resultsmentioning

confidence: 99%

“…Doping with metal cations has proven to be an effective approach to improve the electrical performance of pristine In 2 O 3 devices [ 11 , 12 , 13 , 14 , 15 , 16 , 17 ]. According to previous research [ 18 ], ideal dopants should have high Lewis acid strength (L = Z/r 2 − 7.7χz + 8.0, where r is ionic radius of doped cation, z denotes effective nuclear charge number and χz represents the electronegativity of the element) and high dopant–oxygen bond dissociation energy.…”

Section: Introductionmentioning

confidence: 99%

“…Parthiban et al reported on B-doped In-Zn-O TFTs with a mobility of 9.6 cm 2 /(V s) and Stewart et al demonstrated B-doped In 2 O 3 TFTs with a mobility of 20 cm 2 /(V s) [ 14 , 17 ]. Unfortunately, both these B-doped metal oxides were prepared using a vacuum-based deposition approach, which is not good for potential low-cost applications.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Water-Processed Ultrathin Crystalline Indium–Boron–Oxide Channel for High-Performance Thin-Film Transistor Applications

Peng

et al. 2022

Nanomaterials

View full text Add to dashboard Cite

Thin-film transistors (TFTs) made of solution-processable transparent metal oxide semiconductors show great potential for use in emerging large-scale optoelectronics. However, current solution-processed metal oxide TFTs still suffer from relatively poor device performance, hindering their further advancement. In this work, we create a novel ultrathin crystalline indium–boron–oxide (In-B-O) channel layer for high-performance TFTs. We show that high-quality ultrathin (~10 nm) crystalline In-B-O with an atomically smooth nature (RMS: ~0.15 nm) could be grown from an aqueous solution via facile one-step spin-coating. The impacts of B doping on the physical, chemical and electrical properties of the In2O3 film are systematically investigated. The results show that B has large metal–oxide bond dissociation energy and high Lewis acid strength, which can suppress oxygen vacancy-/hydroxyl-related defects and alleviate dopant-induced carrier scattering, resulting in electrical performance improvement. The optimized In-B-O (10% B) TFTs based on SiO2/Si substrate demonstrate a mobility of ~8 cm2/(V s), an on/off current ratio of ~106 and a subthreshold swing of 0.86 V/dec. Furthermore, by introducing the water-processed high-K ZrO2 dielectric, the fully aqueous solution-grown In-B-O/ZrO2 TFTs exhibit excellent device performance, with a mobility of ~11 cm2/(V s), an on/off current of ~105, a subthreshold swing of 0.19 V/dec, a low operating voltage of 5 V and superior bias stress stability. Our research opens up new avenues for low-cost, large-area green oxide electronic devices with superior performance.

show abstract