Sputtered Thin Film Research

Abstract

The deposition of aluminum nitride was studied by comparing results obtained by reactive rf sputtering in nitrogen and ammonia am~ients. Physical and optical properties of the films were measured.Charge storage characteristics of MIS capacitors employing a composite I insulator structure of SrTi0 3 -sio 2 were studied. The strontium titanate was deposited by rf sputtering. Field effect transistors using SrTi0 3 -sio 2 gate insulation were fabricated and evaluated.

Epitaxial crystal growth by sputter deposition: Applications to semiconductors. Part 2

“…Deposited films exhibited dielectric properties superior to bulk polycrystalline materials at temperatures up to 400°C and good high temperature stability was observed. Shuskus et al274 reported the growth of single crystal AlN layers on (0001) and (01T2) oriented sapphire at 1200°C by rf sputtering in ammonia. The system base pressure was lo-' Torr Pa), the sputtering pressure was 20 mTorr (2.7 Pa), and the film deposition rate was -0.5 pm/ hr.…”