Single-crystal films of aluminum nitride were fabricated on (0001)- and (011̄2)-oriented sapphire substrates by reactive rf sputtering an aluminum target in ammonia gas. Films sputtered on either sapphire orientation were clear, smooth, and piezoelectric. Effective surface acoustic wave piezoelectric coupling constants as large as k2 = 0.2% were found for films sputtered on (0001)-oriented sapphire.

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The deposition of aluminum nitride was studied by comparing results obtained by reactive rf sputtering in nitrogen and ammonia am~ients. Physical and optical properties of the films were measured.Charge storage characteristics of MIS capacitors employing a composite I insulator structure of SrTi0 3 -sio 2 were studied. The strontium titanate was deposited by rf sputtering. Field effect transistors using SrTi0 3 -sio 2 gate insulation were fabricated and evaluated.

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