Depth profilometry of sputtered Ni ions implanted in Ti using pulsed argon and nitrogen plasmas

Sarkissian, A.; Cliche, L.; Paradis, E. L.; LeBlanc, J. B.

doi:10.1016/s0257-8972(97)00067-4

Cited by 13 publications

(7 citation statements)

References 4 publications

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“…3 This device differs from the usual pulsed bias voltage systems. 4 A very similar concept dubbed "direct current plasma immersion" was developed by the Hong Kong group. 4 A very similar concept dubbed "direct current plasma immersion" was developed by the Hong Kong group.…”

Section: Methodsmentioning

confidence: 99%

Online system for temperature and accumulated dose control in plasma-based ion implantation

Roy

Abel

Terreault

et al. 2007

Review of Scientific Instruments

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Surface treatment optimization requires the control of the ion dose and the workpiece temperature, two parameters that are not trivially measurable in plasma-based ion implantation. A temperature and ion fluence monitoring system has been developed and implemented in a plasma-based ion implanter. It is based on the measurement with a thermopile of the radiation emitted from the back face of a thin copper disk inserted in the stainless steel sample holder. Since the incident ions carry practically all the incident power, the measurement of the Cu disk temperature that increases during implantation can provide an evaluation of the ion fluence in real time. A model has been developed for the deconvolution of the temperature data and has been fitted to the temperature behavior during implantation. A good agreement between the total integrated doses, evaluated with Rutherford backscattering spectroscopy characterization, and the ion fluence calculated by means of this model has been obtained with a discrepancy less than 16%.

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Section: Methodsmentioning

confidence: 99%

Online system for temperature and accumulated dose control in plasma-based ion implantation

Roy

Abel

Terreault

et al. 2007

Review of Scientific Instruments

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“…26 A description and characterization of the apparatus and its electron cyclotron resonance (ECR) plasma source can be found elsewhere. [27][28][29] Unfortunately, precise dose calculation is not currently available from the apparatus when insulating material is implanted, although the ion fluence is much better estimated than for immersion plasma.…”

Section: The Ipii Reactormentioning

confidence: 99%

Modification of Wetting Properties of Pmma by Immersion Plasma Ion Implantation

Mireault

Ross

2008

Surf. Rev. Lett.

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Advancing and receding contact angles below 5 • have been obtained on PMMA surfaces with the implantation of argon and oxygen ions. The ion implantations were performed by means of the Immersion Plasma Ion Implantation (IPII) technique, a hybrid between ion beams and immersion plasmas. Characterization of treated PMMA surfaces by means of XPS and its combination with chemical derivatization (CD-XPS) have revealed the depletion of oxygen and the creation of dangling bonds, together with the formation of new chemical functions such as -OOH, -COOH and C=C. These observations provide a good explanation for the strong increase of the wetting properties of the PMMA surfaces.

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“…For example, when the source is required to a produce a high density and pure plasma or reactive gas plasma the microwave plasma source is the first choice. Many sources of this kind have been developed [4][5][6].…”

Section: Improving the Ordinary Microwave Ecr Source By Using A Vacuu...mentioning

confidence: 99%

Improvement of a microwave ECR plasma source for the plasma immersion ion implantation and deposition process

Wu¹,

Zhang²,

Jiang³

et al. 2004

Plasma Sources Sci. Technol.

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The Plasma Immersion Ion Implantation and Deposition (PIII&D) process has many advantages over the pure plasma immersion ion implantation or deposition. It can compensate for or eliminate the disadvantages of the shallow modification layer (for PIII) and increase the bond strength of the coating (of deposition). For this purpose, a new type of microwave plasma source used in the PIII&D process was developed, composed of a vacuum bend wave guide and a special magnetic circuit, so that the coupling window was protected from being deposited with a coating and bombarded by high-energy particles. So the life of the window is increased. To enhance the bonding between the coating and substrate a new biasing voltage is applied to the work piece so that the implantation and deposition (or hybrid process) can be completed in one vacuum cycle.

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Depth profilometry of sputtered Ni ions implanted in Ti using pulsed argon and nitrogen plasmas

Cited by 13 publications

References 4 publications

Online system for temperature and accumulated dose control in plasma-based ion implantation

Online system for temperature and accumulated dose control in plasma-based ion implantation

Modification of Wetting Properties of Pmma by Immersion Plasma Ion Implantation

Improvement of a microwave ECR plasma source for the plasma immersion ion implantation and deposition process

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