Sputtering of metals with 20 keV O: Characteristic etch patterns and sputtered atom yields

Tsunoyama, Kozo; Suzuki, Toshiko; Ohashi, Yusuke; Kishidaka, Hisashi

doi:10.1002/sia.740020605

Cited by 23 publications

(3 citation statements)

References 12 publications

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“…3a), shows that sputtering introduced irregularities onto the surface. The formation of irregularities by the ion beam is confirmed in past reports 24,25 , and is more remarkable in a polycrystal than in a single crystal 26 . This is caused by variation of the sputtering rate depending on the crystal orientation.…”

Section: Resultssupporting

confidence: 68%

Microstructural heterogeneity in the electrodeposited Ni: insights from growth modes

Matsui

Watanabe

Takigawa

et al. 2020

Sci Rep

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Microstructures of electrodeposited ni were studied from the perspective of growth modes during electrodeposition. the electrodeposited ni had a heterogeneous microstructure composed of nanocrystalline-and microcrystalline-grains. Electron backscatter diffraction analyses showed that nanocrystalline-and microcrystalline-grains were preferentially oriented to specific planes. Secondary ion mass spectrometry also revealed that coarse-grained regions had higher S content than that of finer-grained regions. Hence, microstructural heterogeneity in electrodeposited Ni is reflected by the overlap of inhibited and free growth modes. our discussion surrounding microstructural heterogeneity also provides insight into other electrodeposited nanocrystalline systems. Nanocrystalline materials often exhibit more favorable properties than coarse-grained materials because of their nano-grain structure 1-3. Electrodeposition is a typical process for fabricating nano-grain structures 4. In practice, Ni and its alloys are electrodeposited with grain sizes below 100 nm 5-8 , and these electrodeposited nanocrystalline metals and alloys show high strength and good ductility 9-13. However, electrodeposited materials have fiber-like textures, which reflect the preferred crystallographic orientation of their crystallites along the growth direction 14,15. The texture formation of electrodeposits is determined by the electrodeposition conditions 16-18. Amblard et al. 19 explained that electrodeposition conditions change the growth mode during electrodeposition. Furthermore, they showed three types of growth modes, namely free-lateral growth, inhibited-lateral growth, and inhibited-out growth, and indicated that each growth mode resulted in specifically oriented textures on electrodeposited Ni. In the few cases where growth modes (or texture) have been considered 12,20,21 , these features have been shown to profoundly affect the microstructure and mechanical properties. Godon et al. 20 reported the relationship between grain orientation and the Hall-Petch relationship in electrodeposited Ni. The Hall-Petch plot of hardness was classified into three regions based on specific textures. In a subsequent report 21 , they found that grain refinement and changes of textures were linked with an increase in impurity content. The incorporation of impurities resulted from the inhibited growth mode. Matsui et al. 12 found a relationship between the tensile elongation and orientation index for the (200) plane in electrodeposited nanocrystalline Ni-W alloys. This relationship indicates that the free-lateral growth mode is suitable for producing ductile electrodeposited nanocrystalline materials. In previous studies 12,20,21 , the effects of growth modes have been discussed by comparison of typical samples having different dominant orientations. These comparisons are based on the assumption that typical samples are electrodeposited by a single growth mode. Contrary to this assumption, our belief is that the actual electrodeposited samples form with multip...

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Section: Resultssupporting

confidence: 68%

Microstructural heterogeneity in the electrodeposited Ni: insights from growth modes

Matsui

Watanabe

Takigawa

et al. 2020

Sci Rep

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“…The eroded depth can be calculated from the relation: L = ϕY 0 sec θ/N. The normal incidence sputtering yield of Al by D Ghose 16.7 keV O + 2 ions is nearly equal to 0.5 atoms/mol ion [32]. It is known that the oxygen molecule sputters the surface as two oxygen atoms each of half the original energy.…”

Section: Surface Roughness and Ion Fluence Dependencementioning

confidence: 99%

“…Thus the ripple topographies, shown at fluences 9.5 × 10 17 O atoms cm −2 (cf figure 6) are expected to be that of the substrate Si. Fortunately, aluminum and silicon both have nearly identical sputtering yield under 16.7 keV O + 2 bombardment [32]. Thus, in the absence of preferential sputtering, the removal of the top Al layer by ion beam etching can make a smooth transfer of the well-developed corrugated structure at the Al/Si interface to the underlying Si matrix.…”

Section: Surface Roughness and Ion Fluence Dependencementioning

confidence: 99%

Ion beam sputtering induced nanostructuring of polycrystalline metal films

Ghose

2009

J. Phys.: Condens. Matter

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The development of fine scale nanostructures in polycrystalline metal films by off-normal ion beam sputtering (IBS) follows similar mechanisms to those in random targets, i.e. the pattern results from the interplay of curvature-dependent-roughening and various smoothing processes. By grazing angle IBS of the deposited metal films it is possible to fabricate metallic nanoripples, nanowires, and nanorods onto semiconductor or insulator substrates without using a template. It has been found that the rms roughness of the as-deposited film is substantially reduced under ion bombardment before the development of nanoscale patterns. The structural anisotropy of the sputtered morphology can have a great influence on the local physical properties of the underlying material. In this paper, we shall review the experimental results on the formation and characteristics of the IBS ripples on polycrystalline metal films prepared by the physical vapor deposition (PVD) technique.

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Influence of ion mixing, ion beam‐induced roughness and temperature on the depth resolution of sputter depth profiling of metallic bilayer interfaces

Cirlin

Cheng

Ireland

et al. 1990

Surface & Interface Analysis

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To study the factors limiting the depth resolution of sputter depth profiling, we have examined the influence of ion mixing, ion heam-induced rouganesS and temperature on the interface resolution of metallic bdayers coasisting of Pt on top of Ni or Ti. We studied Pt/Ni and Pt/Ti interfaces hecause Ni and Ti have similar ballistic properties, including atomic mass and oumher, but the heat of mixing, AH-of Pt/Ni and Pt/Ti are significantly different, -7 and -122 kJ g-' at.-', respectively. We obsened that the measured interface width for Pt/Ti is -2.5 nm wider than that of Pt/Ni under identical experimental conditions, indicating the importance of the heat of mixing during ion mixing. Furthermore, for the given sputtering geometry we found that the interface widths were proportional to the square root of the Pt layer thicknes. This thickness dependence was abseot when the sample was rotated during sputtering, suggesting that tbe thickness dependence was largely due to roughness caused by unidirectional sputtering. We also investigated the iofluence of substrate temperature and found a small (0.7 om) decrease in interface width at 150 K relative to that at 300 K, which may he due to reduced preferential sputtering and a smoother surface. Our studies show the importance of thermodynamic parameters in low-energy ion mixing and support our earlier conclusion that diffusion in a thermal spike is a dominant mechanism in lowenergy ion mixing, just as it is at high energies in these systems.

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Sputtering of metals with 20 keV O: Characteristic etch patterns and sputtered atom yields

Cited by 23 publications

References 12 publications

Microstructural heterogeneity in the electrodeposited Ni: insights from growth modes

Microstructural heterogeneity in the electrodeposited Ni: insights from growth modes

Ion beam sputtering induced nanostructuring of polycrystalline metal films

Influence of ion mixing, ion beam‐induced roughness and temperature on the depth resolution of sputter depth profiling of metallic bilayer interfaces

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