Sputtering of Si by Ar: A binary collision approach based on quantum-mechanical cross sections

Abstract

A new binary collision approach for the calculation of the sputtering yield of Si under nonreactive ionic bombardment by Ar þ is presented for the energy range from threshold to 200 eV. Unlike conventional Monte Carlo approaches that use a classical calculation of the scattering angle from a known potential, their approach employs quantum-mechanical methods to compute the scattering angle. Comparison of the energy and angular dependence of sputtering yields computed using their new quantum-based method with experimental data and with transport of ions in matter (TRIM) and molecular dynamics (MD) calculations supports the accuracy and usefulness of their approach. It is shown that their new approach leads to results of an accuracy intermediate between that of the TRIM and MD methods. The authors expect the new approach to be useful in plasma processing applications.