Sputtering of Surfaces by Positive Ion Beams of Low Energy

Honig, Richard E.

doi:10.1063/1.1723219

Cited by 257 publications

(48 citation statements)

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“…They found no evidence of a pressure effect on sputtering yields. At much lower energies (up to 400eV), Honig (1958) found that a bombardment ratio of between 0.2 and 2 was not sufficient to maintain a clean surface. Wolsky and Zdanuk (1961) bombarded Si with A+ ions of energy up to 800eV.…”

Section: Fig 23 Average Ejection Energies (E) For Atoms Ejected Inmentioning

confidence: 99%

“…Hillocks were observed which were thought to be associated with the accumulation of mobile surface atoms at locally active centres on the amorphous surface layer. Honig (1958) attributed the presence of hillocks on (111) Ge and 0 (221) Ge-Si, which were several hundred A in height, to aggregates of C atoms which, because of their low sputtering yield, served to mask off parts of the surface which were left standing as hillocks. Meckel (1966) interpreted the presence of strange hillocks found on sputtered Ge surfaces as being due to small electrically insulating particles covering the surface.…”

Section: P-n Junction Devicesmentioning

confidence: 99%

“…Honig (1958) bombarded Ag and Ge surfaces with various noble gas ions at energies between 30 and 400eV. For the Ag sample, the secondary negative ions detected were in order of decreasing intensity, excluding hydrocarbon combinations, Ag20 1 0, OH-, Ag2 and Ag202 .…”

Section: Secondary Negative Ionsmentioning

confidence: 99%

“…Semiconductor targets Honig (1958) bombarded Ag, Ge and Ge-Si alloy surfaces with various noble gas ions at energies between 30 and 400eV. Secondary positive ions were identified as being due to the reflection of primary ions, the ejection of target ion species and the liberation of ion species characteristic of background gases adsorbed on the surfaces.…”

Section: Electronsmentioning

confidence: 99%

“…Nature of the neutral sputtered particles Mass-spectrometric methods have been used to determine the nature of neutral sputtered particles. Honig (1958) bombarded a Ge single crystal with 30 to 400eV Xe+, Kr+, A+ and Ne+ ions and detected Ge, the simple atomic species, and in smaller concentrations Get, the diatomic species. Neutrals due to gas molecules on the surface of the Ge target were also detected during sputtering.…”

Section: Fig 23 Average Ejection Energies (E) For Atoms Ejected Inmentioning

confidence: 99%

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Growth of epitaxial silicon layers by ion beam sputtering

Unvala

Pearmain

1970

J Mater Sci

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An ion beam sputtering technique has been developed which made possible the production of homo-epitaxial Si layers by sputtering for the first time. The A+ ion beam source was considerably modified from the initial design of Hill and Nelson (1965) to give the purity needed for the production of semiconductor layers without mass analysis of the ion beam. Typically, a 12keV 4mA beam of A+ ions struck a Si target at 60° incidence and ejected sputtered atoms were deposited at a rate of 200 A/min on a heated Si(111) substrate placed just above the target. Epitaxial layers were grown at temperatures above about 700°C and the structural quality of these layers was evaluated by transmission electron microscopy. Layers grown at temperatures in excess of 900°C contained only dislocation defects normally to a density of about 8x109 cm-2, whereas epitaxial layers grown at lower temperatures also exhibited stacking faults and microtwinning. The existence of defects in epitaxial layers has been correlated with the severity of bombardment of the substrate during deposition by secondary ions from the target. In all cases, the bombardment conditions were severe enough to continually transform a thin 100 A thick surface region of the newly-deposited sputtered layer to a disordered state. The subsequent reordering characteristics of this disordered surface controlled not only the prominence of individual defects in any epitaxial layer but also whether a layer was single crystal. Electrical properties of epitaxial layers were also strongly dependent on bombardment conditions allowing only high resistivity N-type layers to be grown independent of target conductivity-type and resistivity.The ion beam sputtering properties of Si and GaAs have also been investigated. The similarity in results for single crystal targets to those for polycrystalline targets was again attributed to ion-bombardment-induced surface disorder. Stoichiometric layers of GaAs could only be obtained from polycrystaline targets.

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Section: Fig 23 Average Ejection Energies (E) For Atoms Ejected Inmentioning

confidence: 99%

Section: P-n Junction Devicesmentioning

confidence: 99%

Section: Secondary Negative Ionsmentioning

confidence: 99%

Section: Electronsmentioning

confidence: 99%

Section: Fig 23 Average Ejection Energies (E) For Atoms Ejected Inmentioning

confidence: 99%

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