Sputtering of the gallium-indium eutectic alloy in the liquid phase

Dumke, M.F.; Tombrello, T. A.; Weller, Robert A.; Housley, R. M.; Cirlin, E. H.

doi:10.1016/0039-6028(83)90800-2

Cited by 151 publications

(70 citation statements)

References 13 publications

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“…1 This composite structure -bulk liquid metal supporting a thin rigid, superficial oxide -constitutes a semiconformal (i.e. conformal on length-scales exceeding 1 μm, but probably not conformal on the nanoscale) electrode.…”

Section: Introductionmentioning

confidence: 99%

Odd−Even Effects in Charge Transport across Self-Assembled Monolayers

et al. 2011

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This paper compares charge transport across self-assembled monolayers (SAMs) of nalkanethiol containing odd and even numbers of methylenes. Ultraflat template-stripped silver (Ag TS ) surfaces supported the SAMs, while top-electrodes of eutectic galliumindium (EGaIn) contacted the SAMs to form metal/SAM//oxide/EGaIn junctions. TheEGaIn spontaneously reacts with ambient oxygen to form a thin (~ 2 nm) oxide layer.This oxide layer enabled EGaIn to maintain a stable, conical shape (convenient for forming microcontacts to SAMs) while retaining the ability to deform and flow upon contacting a hard surface. Conical electrodes of EGaIn conform (at least partially) to 2 SAMs, and generate high yields of working junctions. Ga 2 O 3 /EGaIn top electrodes enable the collection of statistically significant numbers of data in convenient periods of time. The observed difference in charge transport between n-alkanethiols with odd-and even-numbers of methylenes -the "odd-even effect" -is statistically discernable using these junctions, and demonstrates that this technique is sensitive to small differences in the structure and properties of the SAM. Alkanethiols with an even number of methylenes exhibit the expected exponential decrease in current density (J) with increasing chain length, as do alkanethiols with an odd number of methylenes. This trend disappears, however, when the two datasets are analyzed together; alkanethiols with an even number of methylenes typically show higher J than homologous alkanethiols with an odd number of methylenes. The precision of the present measurements, and the statistical power of the present analysis, were only sufficient to identify, with statistical confidence, the difference between an odd and even number of methylenes with respect to J, but not with respect to the tunneling decay constant, β, or the pre-exponential factor, J 0 .3

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Section: Introductionmentioning

confidence: 99%

Odd−Even Effects in Charge Transport across Self-Assembled Monolayers

et al. 2011

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“…To get out of this dilemma we go back to the method of data presentation used previously to quantify experimental data [2,3]. The authors quoted the fraction of sputtered atoms originating from the topmost layer, the remaining fraction being attributed to emission from deeper layers.…”

Section: Preferred Methods Of Data Presentationmentioning

confidence: 99%

“…For sputtering of Cu from Ru(0001) by normally incident 5 keV Ar, Burnett et al [2] reported that 66 ± 12% of the sputtered atoms originate from the 'first layer'. From an analysis of sputtering a liquid Ga-In eutectic alloy by Ar at normal incidence, Dumke et al [3] concluded that 85% of the sputtered atoms originated in the 'surface monolayer' at 15 keV, 70% at 25 keV. Given the uncertainties associated with insufficient knowledge of the surface binding energies, the agreement between experimental and calculated data may be considered reasonable.…”

Section: Preferred Methods Of Data Presentationmentioning

confidence: 99%

“…For minimum distortion of the sample, the applied primary ion fluence should be small (< 10 12 ions/cm 2 ). A distinctly different approach is to use a liquid eutectic alloy as a sample, with two appropriately chosen constituents, one being present at the surface as a highly enriched monolayer [3]. The studies showed that the majority of the sputtered atoms originated in the topmost (outermost) atomic layer, more so the lower the primary ion energy.…”

Section: Introductionmentioning

confidence: 99%

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Depth of origin of sputtered atoms: Exploring the dependence on relevant target properties to identify the correlation with low-energy ranges

Wittmaack

Mutzke

2012

Nuclear Instruments and Methods in Physics Research Section B:

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The correlation of the depth of origin (DoO) of sputtered atoms with relevant properties of the bombarded target has not yet been clarified in a satisfactory manner. We have carried out SDTrimSP (Monte Carlo) simulations to study the dependence of depth differential sputtering yields on the following parameters: the position of the primary knock-on atom, the surface binding energy, E s , the target density, N, and the target atomic number, Z 2 . All calculations were performed with normally incident projectiles, either Xe or targetatom-like, with energies between 40 eV and 10 keV. The mean DoO,  x , was found to depend on E s, with a power p between 0.10 (0.1 keV) and 0.26 (10 keV Xe). In prior work, lack of knowledge of this weak E s -dependence did not allow the relation between  x and N to be uncovered properly. To proceed further, differential yields were calculated for targets ranging from carbon to uranium with deliberately varied N, but keeping E s fixed (4.72 eV). The product N x  turned out to depend very little on N. Hence, it is appropriate to specify the origin of sputtered atoms in terms of the equivalent areal density rather than in units depth. For medium-mass or heavy target atoms, i.e., for Z 2 > 20, N x  was largely independent of Z 2 . For Z 2 < 20, N x  increased with decreasing Z 2 . Projected ranges x p calculated for targetatom-like projectiles at energies ≤ 40 eV exhibited almost the same Z 2 -dependence as  x . This finding suggests that  x is determined by the range of the recoils mobilized in the collision cascade. The results of this study are compared with previously published data, with sometimes distinctly different definitions of  x . The idea is recapitulated that the most appropriate way of quantifying the DoO is to quote the fraction of atoms ejected from the top (or outermost) layer of atoms. The fractions determined by SDTrimSP range from about 98% to 75%, for impact energies between 40eV and 10 keV and Z 2 > 20.

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“…Several groups [2-7,lO-141 have used the properties of surface segregation to overcome a relatively low-detection sensitivity in order to determine the second-layer contribution to the sputtering process. In one series of experiments [2,3], a fast segregant (In in Ga) was used to create a monolayer variant target which was unaffected by large primary ion doses. Catcher foils then were used to monitor the partial sputtering yield of each target component.…”

Section: Introductionmentioning

confidence: 99%

Depth of origin of sputtered atoms (Technical Report)

Pellin¹,

Burnett²

1993

Pure and Applied Chemistry

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Names of countries given after Members' names are in accordance with the ZUPAC Handbook 1991-93; changes will be effected in the 1993-95 edition.Republication of this report is permitted without the need for formal IUPAC permission on condition that an acknowledgement, with full reference together with IUPAC copyright symbol (0 I993 IUPAC), is printed.Publication of a translation into another language is subject to the additional condition of prior approval from the relevant IUPAC National Adhering Organization. Unauthenticated Download Date | 5/9/18 10:10 PM Depth of origin of sputtered atoms (Technical Report) AbstractSputtering, the ejection of target material following bombardment by energetic ions, is an extremely important technological process. Sputtering is a particularly important technique for the surface analyst, since it is used for both quantitative analysis of impurity concentrations and determination of depth distributions of impurities. Because of the complexity of sputtering, many of its fundamental parameters are difficult to ascertain. The depth of origin of sputtered atoms is a fundamental parameter of the sputtering process which, until recently, has been the subject of considerable controversy. Fortunately, both experiments and theory have improved greatly in this area, allowing a consensus to be reached on this important parameter. This report describes and evaluates these critical experiments and theories.

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Sputtering of the gallium-indium eutectic alloy in the liquid phase

Cited by 151 publications

References 13 publications

Odd−Even Effects in Charge Transport across Self-Assembled Monolayers

Odd−Even Effects in Charge Transport across Self-Assembled Monolayers

Depth of origin of sputtered atoms: Exploring the dependence on relevant target properties to identify the correlation with low-energy ranges

Depth of origin of sputtered atoms (Technical Report)

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