Sputtering yields for low-energy Ar+- and Ne+-ion bombardment

Somogyvári, Z.; Langer, G.A.; Erdélyi, Zoltán; Balázs, L. G.

doi:10.1016/j.vacuum.2012.03.055

Cited by 18 publications

(12 citation statements)

References 11 publications

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“…It is well known that magnetron discharges generated in Ne gas strongly differ from the magnetron discharges sustained in Ar gas. There is a dramatic difference in the maximum energy E max of Ne + ions generated in the Ne magnetron discharge compared to that of Ar + ions generated in the Ar magnetron discharge . The maximum energy E max of Ne + ions is higher than that of the Ar + ions .…”

Section: Resultsmentioning

confidence: 91%

“…At present, plasma based Physical Vapour Deposition (PVD) technologies are currently used for the preparation and industrial production of thin films and coatings . The relationships between the deposition conditions used for the formation of thin films and coatings, as well as their elemental and phase composition, structure, microstructure and final physical and functional properties are intensively investigated . However, much less attention is paid to basic micro‐parameters of the discharge plasma, such as the electron density, N e , electron temperature, T e , degree of gas ionization, amount of atoms, creation of radicals and energy distribution functions of these species, i.e.…”

Section: Introductionmentioning

confidence: 99%

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Contamination of Magnetron Sputtered Metallic Films by Oxygen From Residual Atmosphere in Deposition Chamber

Pokorný

Musil

Fitl

et al. 2014

Plasma Processes & Polymers

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The article reports on the contamination of Ag thin films sputtered from a pure Ag target in Ar and Ne gas by the RF magnetron by gas atoms contained in residual gas atmosphere in the deposition chamber at different values of the base pressure. The amount of O atoms generated at different values of base pressure is compared with the amount of Ag atoms sputtered at different deposition rates of Ag film. This comparison reveals a great problem in the formation of pure metallic films at low deposition rates and high values of the base pressure. No pure Ag films can be deposited at low in deposition chambers evacuated with diffusion or root pumps to the base pressures lower than 1 mPa only.

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Section: Resultsmentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

Contamination of Magnetron Sputtered Metallic Films by Oxygen From Residual Atmosphere in Deposition Chamber

Pokorný

Musil

Fitl

et al. 2014

Plasma Processes & Polymers

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show abstract

“…The exposure energies were selected at random to [22]. It is applied for a wide range of ion-target combinations [23,24]. The Yamamura model is described as:…”

Section: Methodsmentioning

confidence: 99%

Near-threshold sputter yields of ruthenium under argon and nitrogen ion bombardment

Phadke

Sturm

Kruijs

et al. 2019

Nuclear Instruments and Methods in Physics Research Section B:

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Ion surface interactions near sputter-threshold are of interest for various plasma facing materials. We report experimental determination of sputter yields for ruthenium films grown on a quartz crystal microbalance and exposed to Ar + and N + 2 ions in the energy range of 50-300 eV. Comparison to semi-empirical models shows agreement to previously reported yields for argon bombardment. In the case of nitrogen, the Yamamura model was modified to account for molecular effects and the yields are found to be between extremes of rigid and non-rigid molecular approximations proposed by Yao. Ex-situ XPS measurements revealed implantation of nitrogen in the ruthenium film after exposure to nitrogen ions. The discrepancy between the models and experimental results for N + 2 bombardment is explained by an increase in the surface binding energy of the target leading to a chemically reduced sputter yield.

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“…where M is the mass of sputtered atoms (28.1 and 95.9 uma for Si and Mo, respectively), ρ is the mass density of layers (2.33 and 10.2 g·cm − 3 for Si and Mo [26], respectively), Y is the sputtering yield (for normally incident 100 eV Ar + ions we found 0.07 and 0.13 at.ion − 1 for polycrystalline Si and Mo [27,28], respectively). It should be noted that we consider sputter rates in terms of "sputter volume per time", not "sputter mass per time" as typically accepted in GDOES measurements.…”

Section: Crater Geometrymentioning

confidence: 99%

Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques

et al. 2013

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Sputtering yields for low-energy Ar+- and Ne+-ion bombardment

Cited by 18 publications

References 11 publications

Contamination of Magnetron Sputtered Metallic Films by Oxygen From Residual Atmosphere in Deposition Chamber

Contamination of Magnetron Sputtered Metallic Films by Oxygen From Residual Atmosphere in Deposition Chamber

Near-threshold sputter yields of ruthenium under argon and nitrogen ion bombardment

Sputter depth profiling of Mo/B4C/Si and Mo/Si multilayer nanostructures: A round-robin characterization by different techniques

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