Sputtering yields of nickel and chromium

Chen, G. P.; Seggern, J. von; Gnaser, Hubert; Höfer, Wolfgang

doi:10.1007/bf00616998

Cited by 9 publications

(7 citation statements)

References 16 publications

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“…4 the Y C /Y Ta values calculated by two types of calculations SRIM 2006 [1] and Eckstein's formula. [2] We used the default input parameters in SRIM 2006 simulations as follows: densities ρ C = 2.25 g/cm 3 , ρ Ta = 16.6 g/cm 3 , and surface binding energies E C = 7.41 eV, E Ta = 8.1 eV for C and Ta, respectively. Eckstein's fitting calculations was applied using Eqns (6-8) in ref.…”

Section: Resultsmentioning

confidence: 99%

Determination of the relative sputtering yield of carbon to tantalum by means of Auger electron spectroscopy depth profiling

Kotis

Menyhárd

Sulyok

et al. 2009

Surface & Interface Analysis

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The relative sputtering yield of carbon with respect to tantalum was determined for 1 keV Ar + ion bombardment in the angular range of 70• -82 • (measured from surface normal) by means of Auger electron spectroscopy depth profiling of C/Ta and Ta/C bilayers. The ion bombardment-induced interface broadening was strongly different for the C/Ta and Ta/C, whereas the C/Ta interface was found to be rather sharp, the Ta/C interface was unusually broad. Still the relative sputtering yields (Y C /Y Ta ) derived from the Auger electron spectroscopy depth profiles of the two specimens agreed well. The relative sputtering yields obtained were different from those determined earlier on thick layers, calculated by simulation of SRIM2006 and by the fitting equation of Eckstein. The difference increases with increase of angle of incidence.

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Section: Resultsmentioning

confidence: 99%

Determination of the relative sputtering yield of carbon to tantalum by means of Auger electron spectroscopy depth profiling

Kotis

Menyhárd

Sulyok

et al. 2009

Surface & Interface Analysis

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“…However, the sputtering rates of Ni and Cr have been reported to decrease to Ðvefold by forming oxide. 24 The relative sputtering rates of Ni and Cr are similar at near-normal and grazing angles of incidence where the chemical states of the Ni and Cr surfaces are similar because they are completely oxidized or not oxidized, as shown in Figs 8 and 9. However, there is a large discrepancy in sputtering rate at the intermediate range of incidence angles between 20¡ and 70¡.…”

Section: Surface Chemical State By Xpsmentioning

confidence: 71%

“…This large di †erence in sputtering rate results from the angle e †ect and the oxidation e †ect. 24,27 In the case of 7 keV Ar`ion beam sputtering of Ni, the di †erence between the sputtering rate of 0¡ and 80¡ incidence angles is only D 2.2. However, the sputtering rates of Ni and Cr have been reported to decrease to Ðvefold by forming oxide.…”

Section: Surface Chemical State By Xpsmentioning

confidence: 99%

Mechanism of facet formation on Ni surfaces by sputtering with oxygen ion beams

Kim

Jung

1998

Surf. Interface Anal.

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Surface topographic development by oxygen ion sputtering has been studied by scanning electron microscopy (SEM) for polycrystalline Ni and Cr surfaces. The topography was more developed on an Ni surface than a Cr surface. A facet‐type topography with two faces was developed on an Ni surface by sputtering with 7 keV oxygen ions at off‐normal incidence angles where the sputtered surface is partially oxidized. The surface normal of the one facet face was near 0° and that of the other face was ∽80° to the incident ion beam. The facet angles correlated well with the sputtering rates of the two facet faces because the sputtering rate is minimized at a zero incidence angle and maximized near 80°. A two‐step model for the facet formation is suggested. Initially small oxide islands are formed and act as seeds for the facet formation at the first faceting step. The islands are tilted and faceted as a result of successive surface diffusion in a selected direction due to the surface momentum transfer from the incident ions. At the facet propagation step, the facets grow larger and the summits of the facets are propagated toward the ion beams by the great difference in sputtering rate of the two facet faces. © 1998 John Wiley & Sons, Ltd.

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“…Chen et al 12 measured the Ni sputtering yield values as a function of angle of incidence at 5-keV Ar sputtering. The same group provides some data for 1-keV Ar sputtering as well.…”

Section: Sputtering Yield Data From the Literaturementioning

confidence: 99%

Unexpectedly high sputtering yield of carbon at grazing angle of incidence ion bombardment

Barna

Menyhárd

Kotis

et al. 2005

Journal of Applied Physics

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The relative sputtering yield of amorphous carbon with respect to polycrystalline nickel at Ar-ion bombardment was determined by means of Auger electron spectroscopy depth profiling as a function of the angle of incidence and projectile energy in the ranges of 49°–88° and 0.3–1keV, respectively. It was found that the relative sputtering yield YC∕YNi strongly increases with angle of incidence from 49° to 82°. At around 80° the sputtering yield of C is higher than that of Ni. Above 82° no dependence on the angle of incidence was found. The relative sputtering yield weakly depends on the energy of the projectile. The experimental results will be explained by the help of transport of ion in solid (TRIM) simulations.

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Sputtering yields of nickel and chromium

Cited by 9 publications

References 16 publications

Determination of the relative sputtering yield of carbon to tantalum by means of Auger electron spectroscopy depth profiling

Determination of the relative sputtering yield of carbon to tantalum by means of Auger electron spectroscopy depth profiling

Mechanism of facet formation on Ni surfaces by sputtering with oxygen ion beams

Unexpectedly high sputtering yield of carbon at grazing angle of incidence ion bombardment

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