Squeezed Light Generation in Semiconductors

Fox, A. M.; Baumberg, J.J.; Dabbicco, Maurizio; Hüttner, B.; Ryan, J.F.

doi:10.1103/physrevlett.74.1728

Cited by 68 publications

(22 citation statements)

References 20 publications

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“…Let us note that, due to the giant polariton nonlinearities 13 , the power range used here (5-20 mW) is two orders of magnitudes lower than in previous experiments 10 . These results open the way to the implementation of ultra-low threshold quantum devices integrated in a semiconductor platform.…”

mentioning

confidence: 88%

“…Photon antibunching and squeezing were theoretically predicted and experimentally demonstrated in pioneering resonance fluorescence experiments [4][5][6][7] . In strong contrast, despite several theoretical proposals 8,9 , the continuous variables regime has seen so far only very few experimental achievements [10][11][12] of squeezed states of light in semiconductor materials.…”

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confidence: 98%

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Polariton-generated intensity squeezing in semiconductor micropillars

et al. 2014

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The generation of squeezed and entangled light fields is a crucial ingredient for the implementation of quantum information protocols. In this context, semiconductor materials offer a strong potential for the implementation of on-chip devices operating at the quantum level. Here we demonstrate a novel source of continuous variable squeezed light in pillarshaped semiconductor microcavities in the strong coupling regime. Degenerate polariton four-wave mixing is obtained by exciting the pillar at normal incidence. We observe a bistable behaviour and we demonstrate the generation of squeezing near the turning point of the bistability curve. The confined pillar geometry allows for a larger amount of squeezing than planar microcavities due to the discrete energy levels protected from excess noise. By analysing the noise of the emitted light, we obtain a measured intensity squeezing of 20.3%, inferred to be 35.8% after corrections.

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confidence: 88%

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confidence: 98%

Polariton-generated intensity squeezing in semiconductor micropillars

et al. 2014

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“…L'interaction d'un champ avec un tel milieu produit une compression des fluctuations après propagation sur une distance suffisante. Ce phénomène a été mis en évidence dans des fibres optiques en silice [16] et dans des semi-conducteurs [17]. Les expériences avec des impulsions très courtes ou des solitons sont particulièrement intéressantes [18].…”

Section: Production De Lumière Comprimée Par Un Milieu Possédant Un Iunclassified

Effets non linéaires et fluctuations quantiques

Giacobino

1998

l'Optique Non Linéaire Et Ses Matériaux

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Résumé : Ce cours présente une description des états comprimés du rayonnement et quelques méthodes de production de ces états comprimés, basées sur des principes d'optique non linéaires. Après une brève introduction à la quantification du champ de rayonnement, nous discutons les principales conséquences de la nature quantique du champ sur les fluctuations qui apparaissent dans les mesures. Nous étudions tout d'abord la modification des fluctuations quantiques dans un système optique linéaire comme une lame semi-transparente. Puis nous traitons trois systèmes qui permettent de manipuler les fluctuations quantiques du rayonnement : l'amplificateur paramétrique qui produit un champ " vide comprimé ", la cavité contenant un milieu possédant un indice non linéaire, qui produit un champ d'amplitude non nulle comprimé, et l'oscillateur paramétrique au-dessus du seuil qui produit des faisceaux jumeaux.

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“…Of late, microscopic optical phenomena such as generation of three-wave parametric interactions have attracted keen attention of a large number of workers in the field of quantum optics [4]. Many such investigations are based upon the nonlinear optical response in a semiconducting medium [5,6]. A mechanism for the generation of exciton-induced squeezed state of light is theoretically presented by Nguyen [7].…”

Section: Introductionmentioning

confidence: 99%

Diffusion-induced parametric dispersion and amplification in doped semiconductor plasmas

Yadav

Ghosh

2007

Pramana - J Phys

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Using the hydrodynamic model of semiconductor plasma, the diffusioninduced nonlinear current density and the consequent second-order effective susceptibility are obtained under off-resonant laser irradiation. The analysis deals with the qualitative behaviour of the anomalous parametric dispersion and the gain profile with respect to the excess doping concentration and pump electric field. The analysis suggests that a proper selection of doping level and pump field may lead to either positive or negative enhanced parametric dispersion, which can be of great use in the generation of sequeezed states. It is found that gain maximizes at moderate doping concentration level, which may drastically reduce the fabrication cost of parametric amplifier based on this interaction.

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Squeezed Light Generation in Semiconductors

Cited by 68 publications

References 20 publications

Polariton-generated intensity squeezing in semiconductor micropillars

Polariton-generated intensity squeezing in semiconductor micropillars

Effets non linéaires et fluctuations quantiques

Diffusion-induced parametric dispersion and amplification in doped semiconductor plasmas

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