Diffusion-induced parametric dispersion and amplification in doped semiconductor plasmas

Abstract

Using the hydrodynamic model of semiconductor plasma, the diffusioninduced nonlinear current density and the consequent second-order effective susceptibility are obtained under off-resonant laser irradiation. The analysis deals with the qualitative behaviour of the anomalous parametric dispersion and the gain profile with respect to the excess doping concentration and pump electric field. The analysis suggests that a proper selection of doping level and pump field may lead to either positive or negative enhanced parametric dispersion, which can be of great use in the generation of sequeezed states. It is found that gain maximizes at moderate doping concentration level, which may drastically reduce the fabrication cost of parametric amplifier based on this interaction.

Ultrasonic waves in a piezoelectric semiconductor quantum plasma: the gain analysis

“…In quantum semiconductor devices, it is substantial to investigate the impacts of quantum mechanics on the behavior of charge carriers to work with electrons and holes at the nanometer-sized semiconductors [10]. Semiconductors are used in many complexes, fast, and sensitive electronic devices because of their compactness, relaxation time management, and highly advanced manufacturing technology [11]. In the new miniature semiconductors, de Broglie wavelengths of charge carriers are comparable to system scales such as Debye shielding length, so quantum effects are very important.…”

Nonlinear parametric interactions in ion-implanted semiconductor plasmas having strain-dependent dielectric constants

“…Nonlinear parametric (NLP) interactions in semiconducting materials have been studied by a number of researchers. [1][2][3][4][5][6][7][8] These interactions provide useful information regarding the physical properties of the host medium. A variety of nonlinear effects have been observed in the interaction of high-power electromagnetic waves with semiconductor plasmas.…”

“…real as a function of k at a particular pump electric field E 0 in the vicinity of the threshold |E 0th |. It can be observed that χ(3) …”