Squeezing Light in Wires: Fundamental Optical Properties of Si Nanowire Waveguides

Driscoll, Jeffrey B.; Osgood, Richard M.; Grote, Richard R.; Dadap, Jerry I.; Panoiu, Nicolae C.

doi:10.1109/jlt.2015.2431984

Cited by 11 publications

(5 citation statements)

References 97 publications

(150 reference statements)

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“…It features a variety of advantages including large-scale manufacturability, high reproducibility, and high integration density. Similar to the advancement of integrated electronics with the feature width of interconnect decreasing down to sub-10-nm level driven by Moore’s law 7 , 8 , size miniaturization of integrated photonics also develops rapidly for higher operation speed, less power consumption, and so on 9 – 11 . However, compared to electric current in a metal wire with relatively low frequency, optical frequency signals in a waveguide are much more sensitive to the surface roughness, leading to roughness-induced optical loss in top-down fabrication structures 12 .…”

Section: Introductionmentioning

confidence: 99%

Flexible integration of free-standing nanowires into silicon photonics

Chen

Xin

et al. 2017

Nat Commun

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Silicon photonics has been developed successfully with a top-down fabrication technique to enable large-scale photonic integrated circuits with high reproducibility, but is limited intrinsically by the material capability for active or nonlinear applications. On the other hand, free-standing nanowires synthesized via a bottom-up growth present great material diversity and structural uniformity, but precisely assembling free-standing nanowires for on-demand photonic functionality remains a great challenge. Here we report hybrid integration of free-standing nanowires into silicon photonics with high flexibility by coupling free-standing nanowires onto target silicon waveguides that are simultaneously used for precise positioning. Coupling efficiency between a free-standing nanowire and a silicon waveguide is up to ~97% in the telecommunication band. A hybrid nonlinear-free-standing nanowires–silicon waveguides Mach–Zehnder interferometer and a racetrack resonator for significantly enhanced optical modulation are experimentally demonstrated, as well as hybrid active-free-standing nanowires–silicon waveguides circuits for light generation. These results suggest an alternative approach to flexible multifunctional on-chip nanophotonic devices.

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Section: Introductionmentioning

confidence: 99%

Flexible integration of free-standing nanowires into silicon photonics

Chen

Xin

et al. 2017

Nat Commun

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“…One promising alternative to the commonly used copper wires [3] are optical interconnects implemented in the silicon-on-insulator platform [4], [5], [6]. Importantly, due to the unique optical properties of silicon photonic waveguides (Si-PhWs) [7], [8], [9], employing silicon photonics based solutions for system interconnects does not simply amount to replacing copper wires with photonic wires, but they can also be used to implement key functionalities required by optical networks-on-chip. Thus, not only that Si-PhWs could facilitate ultrahigh bandwidth data communication [10], but also their strong dispersion and large optical nonlinearity allowed for the chip-level implementation of many functionalities, including optical modulators and switches [11], receivers [12], mode multiplexing [13], optical amplifiers [14], and frequency converters [15].…”

Section: Introductionmentioning

confidence: 99%

BER in Slow-Light and Fast-Light Regimes of Silicon Photonic Crystal Waveguides: A Comparative Study

You

Panoiu

2017

IEEE Photon. Technol. Lett.

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In this paper, we present an in-depth comparison between the bit-error ratio (BER) of optical systems containing silicon photonic crystal (Si-PhC) waveguides (Si-PhCWs) operating in the slow-and fast-light regimes. Our analysis of these optical interconnects employs the time domain Karhunen-Loève expansion method for the statistical analysis of the optical signal and relies on a full theoretical model and its linearized form to describe the propagation of noisy optical signals in Si-PhCWs. These models incorporate all key linear and nonlinear optical effects and the mutual interaction between free-carriers and the optical field, as well as the influence of slow-light effects on the optical field and carriers dynamics. Using these tools and employing a 512-bit pseudorandom bit sequence, we have studied the dependence of BER on the key system parameters, including group-velocity, input power, and signal-to-noise ratio.

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“…Low cost, availability as well as linear and nonlinear optical properties of silicon has caused silicon to be an ideal material for the production of nanoscale integrated photonic devices [1]- [6]. Large refractive index of silicon (n = 3.5) compared to the small refractive index of cladding (n = 1 for air and n = 1.45 for silica) leads to tight light confinement [1] [3]- [7].…”

Section: Introductionmentioning

confidence: 99%

“…Such strong light confinement, allows the waveguide silicon devices to have a very small cross-section in the order of nanometer and such devices are called silicon nanowires. Reduction of the nanoscale cross-section together with the high refractive-index contrast would lead to two distinct advantages: First, the ability to control the dispersion and high optical field intensity; Second, potential applications of silicon for nonlinear optics [1] [5] [6] [8]. Although silicon does not exhibit second-order nonlinear effects, it possesses a very high nonlinear optical third-order susceptibility, approximately 3 to 4 times larger than that of the silica [1] [5] [6].…”

Section: Introductionmentioning

confidence: 99%

Simulation of Chirped Pulse Propagation in Silicon Nanowires: Shape and Spectrum Analysis

Pakarzadeh¹,

Delirian²,

Taghizadeh³

2016

OPJ

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In this paper, we simulate the propagation of chirped pulses in silicon nanowires by solving the nonlinear Schrödinger equation (NLSE) using the split-step Fourier (SSF) method. The simulations are performed both for the pulse shape (time domain) and for the pulse spectrum (frequency domain), and various linear and nonlinear effects changing the shape and the spectrum of the pulse are analyzed. Owing to the high nonlinear coefficient and a very small effective-mode area, the required length for observing nonlinear effects in nanowires is much shorter than that of conventional optical fibers. The impacts of loss, nonlinear effects, second-and third-order dispersion coefficients and the chirp parameter on pulse propagation along the nanowire are investigated. The results show that the sign and the value of the chirp parameter have important role in pulse propagation so that in the anomalous dispersion regime, the compression occurs for the upchirped pulses, whereas the broadening takes place for the down-chirped pulses. The opposite situation happens for up-and down-chirped pulses propagating in the normal dispersion regime.

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Squeezing Light in Wires: Fundamental Optical Properties of Si Nanowire Waveguides

Cited by 11 publications

References 97 publications

Flexible integration of free-standing nanowires into silicon photonics

Flexible integration of free-standing nanowires into silicon photonics

BER in Slow-Light and Fast-Light Regimes of Silicon Photonic Crystal Waveguides: A Comparative Study

Simulation of Chirped Pulse Propagation in Silicon Nanowires: Shape and Spectrum Analysis

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