SRAM cell defect isolation methodology by sub micron probing technique

Sibileau, F.; Ali, Channa Babar; Giret, C.; Faure, D.

doi:10.1016/j.microrel.2005.07.046

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“…Failures in the lower layers of semiconductor devices are usually examined by removing the surface of a sample until the layer of interest followed by electrical probing on that layer [1,2] or by cutting out a part of the sample (lamella) with the focused ion beam (FIB) [3] and by analysing the lamella with a scanning transmission electron microscope (STEM) detector. Alternatively or in addition, the lamella is transferred to a transmission electron microscope (TEM) [4][5][6][7] for further analysis.…”

Section: Introductionmentioning

confidence: 99%