SrTiO3 insulator for low-voltage organic field-effect transistors

Yan, Hu; Okuzaki, Hidenori

doi:10.1016/j.synthmet.2011.06.002

Cited by 1 publication

(1 citation statement)

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“…Strontium titanate SrTiO 3 (STO) is known as one of the best characterized perovskite class materials; it has a cubic crystal structure with the advantage of a high dielectric constant of ε r = 300 for bulk material at room temperature. STO has been used as a gate dielectric for some organic TFTs [10,11], or MOSFETs [12] but so far, it has not yet been used with Cu 2 O TFTs.…”

Section: Introductionmentioning

confidence: 99%

Effect of Gate Dielectrics on the Performance of P-Type Cu<sub>2</sub>O TFTs Processed at Room Temperature

Al-Jawhari

Caraveo-Frescsa

2013

AMR

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Single-phase Cu2O films with p-type semiconducting properties were successfully deposited by reactive DC magnetron sputtering at room temperature followed by post annealing process at 200°C. Subsequently, such films were used to fabricate bottom gate p-channel Cu2O thin film transistors (TFTs). The effect of using high-κ SrTiO3 (STO) as a gate dielectric on the Cu2O TFT performance was investigated. The results were then compared to our baseline process which uses a 220 nm aluminum titanium oxide (ATO) dielectric deposited on a glass substrate coated with a 200 nm indium tin oxide (ITO) gate electrode. We found that with a 150 nm thick STO, the Cu2O TFTs exhibited a p-type behavior with a field-effect mobility of 0.54 cm2.V-1.s-1, an on/off ratio of around 44, threshold voltage equaling-0.62 V and a sub threshold swing of 1.64 V/dec. These values were obtained at a low operating voltage of-2V. The advantages of using STO as a gate dielectric relative to ATO are discussed.

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Section: Introductionmentioning

confidence: 99%