Ceria and ceria-based materials have
versatile technological and industrial applications physically ascribed
to the flexible fluctuation of the Ce oxidation state between Ce4+ and Ce3+. Considerable multidisciplinary
research has been carried out to obtain the Ce oxidation state, which
is crucial for their application; however, a rigorous and physically
correct determination of the oxidation state is still lacking. Here,
we conduct first-principles DFT + U calculations
to unambiguously determine the physical oxidation state of Ce in ceria-based
materials, such as homogenous Ce
n
O2n–2 (n = 7, 9, 10,
11, and 12), ceria doped by multivalent Ti and V, Ce–Ti(V)–O
ternary compounds, and Ce–Ti–V–O quaternary compounds.
The results show that the Ce oxidation state depends on the local
structure and chemical surrounding: oxygen vacancy facilitates the
transition from Ce4+ to Ce3+, which is consistent
with the localization of Ce 4f electrons; Ti and V with the 3d energy
levels higher than 4f energy levels of Ce generally tend to reduce
Ce4+ to Ce3+, particularly under an oxygen-deficient
condition. The atom-resolved determination of the Ce oxidation states
in complicated compounds offers great promise for understanding the
physical and chemical behavior of ceria-based materials and for rational
design of novel ceria-based materials for application potentials.