Stability, bistability and instability of amorphous ZrO<sub>2</sub>resistive memory devices

Parreira, P.; Paterson, Gary W.; McVitie, S.; MacLaren, Donald A.

doi:10.1088/0022-3727/49/9/095111

Cited by 52 publications

(35 citation statements)

References 38 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…A Schottky barrier was thought to be established at CeO 2 /Pt bottom interface59. When a set voltage pulse was applied to the device, electrons injected by the Pt BE were easily trapped by the TiO/CeO 2 top interface due to the Schottky barrier existed at the bottom interface.…”

Section: Resultsmentioning

confidence: 99%

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

Rana

Akbar

Ismail

et al. 2017

Sci Rep

View full text Add to dashboard Cite

Resistance switching characteristics of CeO2/Ti/CeO2 tri-layered films sandwiched between Pt bottom electrode and two different top electrodes (Ti and TaN) with different work functions have been investigated. RRAM memory cells composed of TaN/CeO2/Ti/CeO2/Pt reveal better resistive switching performance instead of Ti/CeO2/Ti/CeO2/Pt memory stacks. As compared to the Ti/CeO2 interface, much better ability of TaN/CeO2 interface to store and exchange plays a key role in the RS performance improvement, including lower forming/SET voltages, large memory window (~102) and no significant data degradation during endurance test of >104 switching cycles. The formation of TaON thinner interfacial layer between TaN TE and CeO2 film is found to be accountable for improved resistance switching behavior. Partial charge density of states is analyzed using density functional theory. It is found that the conductive filaments formed in CeO2 based devices is assisted by interstitial Ti dopant. Better stability and reproducibility in cycle-to-cycle (C2C) resistance distribution and Vset/Vreset uniformity were achieved due to the modulation of current conduction mechanism from Ohmic in low field region to Schottky emission in high field region.

show abstract

Section: Resultsmentioning

confidence: 99%

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

Rana

Akbar

Ismail

et al. 2017

Sci Rep

View full text Add to dashboard Cite

show abstract

“…Resistance random access memory (ReRAM) has drawn considerable attention as a replacement for current nonvolatile memories . It is based on the different resistance states that can be set by specific electrical stimulation of a large variety of binary and complex transition metal oxides, including titanates, zirconates, and manganites . For many of these systems, the typically bipolar resistive switching arises from redox processes that are induced by a voltage‐driven movement of oxygen vacancies within a spatially confined filament region that evolves initially during a so‐called electroforming process .…”

Section: Introductionmentioning

confidence: 99%

Spectroscopic Indications of Tunnel Barrier Charging as the Switching Mechanism in Memristive Devices

Arndt

Borgatti

Offi

et al. 2017

Adv Funct Materials

View full text Add to dashboard Cite

Resistive random access memory is a promising, energy-efficient, low-power "storage class memory" technology that has the potential to replace both flash storage and on-chip dynamic memory. While the most widely employed systems exhibit filamentary resistive switching, interface-type switching systems based on a tunable tunnel barrier are of increasing interest. They suffer less from the variability induced by the stochastic filament formation process and the choice of the tunnel barrier thickness offers the possibility to adapt the memory device current to the given circuit requirements. Heterostructures consisting of a yttria-stabilized zirconia (YSZ) tunnel barrier and a praseodymium calcium manganite (PCMO) layer are employed. Instead of spatially localized filaments, the resistive switching process occurs underneath the whole electrode. By employing a combination of electrical measurements, in operando hard X-ray photoelectron spectroscopy and electron energy loss spectroscopy, it is revealed that an exchange of oxygen ions between PCMO and YSZ causes an electrostatic modulation of the effective height of the YSZ tunnel barrier and is thereby the underlying mechanism for resistive switching in these devices.

show abstract

“…The amorphous state of ZrO 2 ( a ‐ZrO 2 ) has various important technological applications as well . The theoretical investigations based on first‐principles molecular dynamics (MD) simulations have revealed that it has a local structure analogous to that of the baddeleyite phase.…”

Section: Introductionmentioning

confidence: 99%

“…The amorphous state of ZrO 2 (a-ZrO 2 ) has various important technological applications as well. 5,[28][29][30] The theoretical investigations based on first-principles molecular dynamics (MD) simulations [31][32][33][34] have revealed that it has a local structure analogous to that of the baddeleyite phase. The crystallization behavior of a-ZrO 2 at high temperatures has been also experimentally explored.…”

Section: Introductionmentioning

confidence: 99%

Amorphous zirconia at high pressure

Durandurdu

2018

J Am Ceram Soc

View full text Add to dashboard Cite

We show, by means of ab initio calculations, that amorphous zirconia progressively transforms to a high‐density amorphous phase with the application of pressure. The average coordination number of Zr and O atoms under pressure rises gradually to 8 and 4, respectively. The main building unit of the dense noncrystalline state is the eightfold‐coordinated Zr atoms (62.5%). When the coordinated modification of Zr atoms in the zirconia crystal at high pressure and temperature conditions is considered, it can be perceived that amorphous zirconia follows a transformation mechanism similar to the one observed at high temperature but different than the one detected at high pressure. The dense disordered phase is indeed found to be locally comparable with the high‐temperature tetragonal crystal. Upon decompression, some high‐pressure arrangements are persevered in the model and a transformation into another amorphous state whose structure is intermediate between uncompressed and dense amorphous phases is observed in the simulations. The high‐pressure amorphous structures are found to be semiconductors with a band gap smaller than that of the original model.

show abstract

Stability, bistability and instability of amorphous ZrO₂resistive memory devices

Cited by 52 publications

References 38 publications

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

Spectroscopic Indications of Tunnel Barrier Charging as the Switching Mechanism in Memristive Devices

Amorphous zirconia at high pressure

Contact Info

Product

Resources

About

Stability, bistability and instability of amorphous ZrO2resistive memory devices

Cited by 52 publications

References 38 publications

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

Endurance and Cycle-to-cycle Uniformity Improvement in Tri-Layered CeO2/Ti/CeO2 Resistive Switching Devices by Changing Top Electrode Material

Spectroscopic Indications of Tunnel Barrier Charging as the Switching Mechanism in Memristive Devices

Amorphous zirconia at high pressure

Contact Info

Product

Resources

About

Stability, bistability and instability of amorphous ZrO₂resistive memory devices