Stability Improvement of 60 GHz Narrowband Amplifier Using Microstrip Coupled Lines

Chang, Woojin; Lim, Jong‐Won; Ahn, Ho−Kyun; Ji, Hong−Gu; Kim, Haecheon

doi:10.4218/etrij.09.1209.0012

Cited by 9 publications

(5 citation statements)

References 9 publications

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“…Micostriplines have lower variations in their characteristics compared to MIM capacitors because the effective metal thickness with 99% energy is very thin at high frequencies. Microstriplines show very stable characteristics even when the metal thickness varies from a run-by-run fabrication process [7]. Therefore, microstriplines were used for matching circuits composed of some inductors instead of MIM capacitors except for three MIM capacitors acting as DC blocks in the matching circuits of the LNA circuit, as shown in Fig.…”

Section: Designmentioning

confidence: 99%

Compact 10 ∼ 13 GHz GaN low noise amplifier MMIC using simple matching and bias circuits

Chang

Park

Mun

et al. 2014

2014 9th European Microwave Integrated Circuit Conference

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A compact 10 ~ 13 GHz low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) using simple matching and bias circuits is designed and fabricated using AlGaN/GaN 0.25 μm high electron mobility transistor (HEMT) technology on silicon carbide (SiC) substrate. In order to reduce the chip size and simplify the structure of the LNA, the matching and bias circuits were combined functionally and structurally together and the meandered microstriplines were used. And the combined circuits also contributed to decrease the noise figure of the LNA. Therefore, the measured noise figures of the LNA are almost equal to the minimum noise figure of 2 x 100 μm device which was used for the first stage of the LNA. And also the chip size of the fabricated LNA is 1.7 x 0.8 mm 2 including two groundsignal-ground (GSG) pads and the DC pads on the chip. The LNA shows a noise figure of 1.7 ~ 2.1 dB with a gain of 19 ~ 26 dB across the 10 ~ 13 GHz frequency range. In continuous wave (CW) conditions, it presents a saturated output power of 29 ~ 34 dBm for 10 ~ 13 GHz and also the output third-order intercept point (OIP3) of 42 dBm at 11.4 GHz.

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Section: Designmentioning

confidence: 99%

Compact 10 ∼ 13 GHz GaN low noise amplifier MMIC using simple matching and bias circuits

Chang

Park

Mun

et al. 2014

2014 9th European Microwave Integrated Circuit Conference

Self Cite

View full text Add to dashboard Cite

show abstract

“…Micostriplines have lower variations in their characteristics compared to MIM capacitors because the effective metal thickness with 99% energy is very thin at high frequencies. Microstriplines show very stable characteristics even when the metal thickness varies from a run‐by‐run fabrication process . Therefore, microstriplines are used for matching circuits composed of some inductors instead of MIM capacitors except for three MIM capacitors acting as DC blocks in the matching circuits of the LNA circuit, as shown in Figure .…”

Section: X‐band Gan Hemt Mmic Lna Designmentioning

confidence: 99%

X‐band MMIC low‐noise amplifier MMIC on SiC substrate using 0.25‐μm ALGaN/GaN HEMT technology

Chang

Jeon

Park

et al. 2013

Micro & Optical Tech Letters

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In this article, we demonstrate a 9.7–12.9‐GHz monolithic microwave integrated circuit low‐noise amplifier (LNA) designed and fabricated using a AlGaN/GaN 0.25‐µm high‐electron mobility transistor on silicon carbide (SiC) technology. Microstriplines are used for matching circuits, except for the MIM capacitors acting as DC blocks in the matching circuits of the LNA circuit. The matching and bias circuits of the LNA are merged and meandered to simplify the structure of the amplifier and reduce the chip size. The LNA shows a noise figure of 1.7–2.1 dB with a small‐signal gain of 20–26 dB and an isolation of 45–52 dB across the 9.7–12.9 GHz frequency range. Under continuous wave conditions, a saturated output power of 34 dBm is shown at 11.2 GHz, and an output third‐order intercept point of 42 dBm is also achieved at 11.4 GHz. © 2014 Wiley Periodicals, Inc. Microwave Opt Technol Lett 56:96–99, 2014

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“…To achieve gain flatness for a wideband of 15 GHz (71 GHz to 86 GHz), the lumped element method has difficulty maintaining a constant performance, and the higher the operating frequency, the more influential the chip performance. Studies have shown that the transmission line matching method using EM simulation reaches a wider band performance [10], [11]. Thus, the transmission line input/output matching method has been chosen in this paper.…”

Section: High-gain Lna Design and Fabricationmentioning

confidence: 99%

E-Band Wideband MMIC Receiver Using 0.1 µm GaAs pHEMT Process

Kim¹

2012

ETRI J

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In this paper, the implementations of a 0.1 µm gallium arsenide (GaAs) pseudomorphic high electron mobility transistor process for a low noise amplifier (LNA), a subharmonically pumped (SHP) mixer, and a single‐chip receiver for 70/80 GHz point‐to‐point communications are presented. To obtain high‐gain performance and good flatness for a 15 GHz (71 GHz to 86 GHz) wideband LNA, a five‐stage input/output port transmission line matching method is used. To decrease the package loss and cost, 2nd and 4th SHP mixers were designed. From the measured results, the five‐stage LNA shows a gain of 23 dB and a noise figure of 4.5 dB. The 2nd and 4th SHP mixers show conversion losses of 12 dB and 17 dB and input P1dB of –1.5 dBm to 1.5 dBm. Finally, a single‐chip receiver based on the 4th SHP mixer shows a gain of 6 dB, a noise figure of 6 dB, and an input P1dB of –21 dBm.

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Stability Improvement of 60 GHz Narrowband Amplifier Using Microstrip Coupled Lines

Cited by 9 publications

References 9 publications

Compact 10 ∼ 13 GHz GaN low noise amplifier MMIC using simple matching and bias circuits

Compact 10 ∼ 13 GHz GaN low noise amplifier MMIC using simple matching and bias circuits

X‐band MMIC low‐noise amplifier MMIC on SiC substrate using 0.25‐μm ALGaN/GaN HEMT technology

E-Band Wideband MMIC Receiver Using 0.1 µm GaAs pHEMT Process

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Stability Improvement of 60 GHz Narrowband Amplifier Using Microstrip Coupled Lines

Cited by 9 publications

References 9 publications

Compact 10 &#x223C; 13 GHz GaN low noise amplifier MMIC using simple matching and bias circuits

Compact 10 &#x223C; 13 GHz GaN low noise amplifier MMIC using simple matching and bias circuits

X‐band MMIC low‐noise amplifier MMIC on SiC substrate using 0.25‐μm ALGaN/GaN HEMT technology

E-Band Wideband MMIC Receiver Using 0.1 &micro;m GaAs pHEMT Process

Contact Info

Product

Resources

About

Compact 10 ∼ 13 GHz GaN low noise amplifier MMIC using simple matching and bias circuits

Compact 10 ∼ 13 GHz GaN low noise amplifier MMIC using simple matching and bias circuits

E-Band Wideband MMIC Receiver Using 0.1 µm GaAs pHEMT Process