2019
DOI: 10.1063/1.5123869
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Stability investigations of Cz-PERC modules during damp heat testing and transport: The impact of the boron-oxygen defect

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Cited by 5 publications
(3 citation statements)
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“…The root cause was found to be changes in the open circuit voltage and in the short circuit current which are attributed to the cell material. It is already described in the literature that a stabilized BO defect in Cz-PERC modules can be destabilized during a DH test [9]. It is concluded that part of the high-power losses are an artifact due to the BO defect.…”
Section: Discussionmentioning
confidence: 74%
“…The root cause was found to be changes in the open circuit voltage and in the short circuit current which are attributed to the cell material. It is already described in the literature that a stabilized BO defect in Cz-PERC modules can be destabilized during a DH test [9]. It is concluded that part of the high-power losses are an artifact due to the BO defect.…”
Section: Discussionmentioning
confidence: 74%
“…The process is accelerated because of exposure to light and/or high temperature 22 . DH testing may cause LeTID like damage to PERC PV cells, even in the absence of light, as the PV modules are exposed to elevated temperature for an extended duration 23 . For longer periods of exposure a saturation point is reached, since the hydrogen forms a stable bond with existing defects of the cell, a reaction that causes annihilation of the LeTID effect 24 .…”
Section: Introductionmentioning
confidence: 99%
“…22 DH testing may cause LeTID like damage to PERC PV cells, even in the absence of light, as the PV modules are exposed to elevated temperature for an extended duration. 23 For longer periods of exposure a saturation point is reached, since the hydrogen forms a stable bond with existing defects of the cell, a reaction that causes annihilation of the LeTID effect. 24 The parameter affected mainly by LeTID is the open circuit voltage (V OC ), 25,26 possibly due to the variation of the saturation current of the non-ideal diode, appearing on the twodiode model, 27 which represents additional carrier recombinations caused by material defects.…”
mentioning
confidence: 99%