Stability of IZO and a-Si:H TFTs Processed at Low Temperature (200 $^{\circ}{\hbox{C}}$)

Kaftanoglu, Korhan; Venugopal, Sameer M.; Marrs, Michael; Dey, Aritra; Bawolek, Edward J.; Allee, David R.; Loy, Doug

doi:10.1109/jdt.2011.2107879

Cited by 30 publications

(17 citation statements)

References 15 publications

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“…The on/off ratio was approximately 10 5 . To the best of our knowledge, this mobility is higher than those of previously reported n-type CNT-TFTs fabricated on solid substrates [10,17,18,23,24] and those of n-type TFTs recently fabricated on plastic films, including organic TFTs [30][31][32][33][34], amorphous-Si TFTs [35][36][37][38][39], and oxide TFTs [40][41][42][43][44][45]. The high mobility would originate from the long and clean CNTs composing the channel formed by the dry filtration and transfer process.…”

Section: Resultsmentioning

confidence: 66%

Fabrication of high‐mobility n ‐type carbon nanotube thin‐film transistors on plastic film

Yasunishi

Kishimoto

Kauppinen

et al. 2013

Phys. Status Solidi C

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Shouwu Guo and co‐workers present how graphene quantum dots (GQDs) with unique morphology and ultrasmall lateral sizes are internalized primarily via caveolae‐mediated endocytosis, and tend to accumulate in the endoplasmic reticulum and nucleus. The GQDs also exhibit lower cytotoxicity than that of the micrometer‐sized graphene oxide, which prefers to stay in the cytoplasm. The subcellular distribution and low cytotoxicity of GQDs hold great promise in biomedical applications.

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Section: Resultsmentioning

confidence: 66%

Fabrication of high‐mobility n ‐type carbon nanotube thin‐film transistors on plastic film

Yasunishi

Kishimoto

Kauppinen

et al. 2013

Phys. Status Solidi C

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“…2 shows that thin-film technologies such as a-Si:H and IZO display distinctly unstable dc characteristics after 10 000 s electrical bias. The InAs NW TFTs remain relatively stable for prolonged periods of electrical stress with a threshold voltage shift less than 0.25 V. In contrast, a-Si:H and InZnO shift by almost 9 and 1.7 V, respectively [7]. Since the NW devices operate at significantly lower drive voltages than the compared devices, it inherently lowers the potential V t shifts.…”

Section: Resultsmentioning

confidence: 98%

Stability and Low-Frequency Noise in InAs NW Parallel-Array Thin-Film Transistors

Wahl

Wang

Chung

et al. 2013

IEEE Electron Device Lett.

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In this letter, we present the dc characteristics, stability, and low-frequency noise (LFN) measurements, for n-type indium arsenide nanowire (NW) parallel-array thin-film transistors (TFTs) with a global back gate. These devices perform with mobilities ranging from 200-1200 cm 2 V −1 s −1 and produce a threshold voltage shift less than 0.25 V after 10 000 s of stress. The resulting LFN measurements indicate that the 1/ f noise can be modeled by the number fluctuation model, at low drain currents, which can provide an essential guideline for the device design considerations of NW TFTs.

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“…Realistically, however, each pixel's performance is dictated by manufacturing variations; a problem magnified by the wide parameter variance common in low temperature TFT processes [15,16,21]. To compensate for this response uncertainty, we quantified the variance of two key electrical parameters using measured data from transistors manufactured using an InGaZnO process: threshold voltage, V T, and electron mobility, �.…”

Section: A Modeling Methodologymentioning

confidence: 99%

“…Our dual stage APS design implements n-type thin film transistors fabricated in either a low temperature a-Si:H or InGaZnO FDC process [15,16]. Any incident charged radiation, or light, on the reverse-biased PIN diode will generate a small change in charge at the cathode.…”

Section: A Aps Functionalitymentioning

confidence: 99%

Large area sensing arrays for detection of thermal neutrons

Kunnen¹,

Pressler²,

Lee³

et al. 2012

2012 IEEE Nuclear Science Symposium and Medical Imaging Conference Record (NSS/MIC)

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Developments of flexible detection arrays suggest that portable robust detectors are indeed possible. A large area flexible array promises a large capture cross section in a light weight rugged format suitable for deployment at ports of entry.The approach for this detector uses a high neutron-capture cross section layer, such as lOB, which captures incident thermal neutrons, and emits energetic ionizing charged particles. These ionizing particles are sensed using an integrated diode. The resulting charge is then amplified via a low-noise thin film transistor amplifier. We present a low-noise optimized active pixel sensor (APS) design which can be implemented in either a low temperature InGaZnO or an a-Si:H thin film transistor (TFT) process compatible with plastic substrates. Here, we also present a detectable alpha particle response with our dual stage APS design in combination with an externally connected commercial PIN diode. Furthermore, we discuss detector and array modeling which will further aid in future designs.

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Stability of IZO and a-Si:H TFTs Processed at Low Temperature (200 $^{\circ}{\hbox{C}}$)

Cited by 30 publications

References 15 publications

Fabrication of high‐mobility n ‐type carbon nanotube thin‐film transistors on plastic film

Fabrication of high‐mobility n ‐type carbon nanotube thin‐film transistors on plastic film

Stability and Low-Frequency Noise in InAs NW Parallel-Array Thin-Film Transistors

Large area sensing arrays for detection of thermal neutrons

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