Stability of multiple Shockley type basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals

Mannen, Yuina; Shimada, Kana; Taniguchi, Chisato; Ohtani, Noboru

doi:10.1016/j.jcrysgro.2018.06.029

Cited by 4 publications

(1 citation statement)

References 36 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Although 3SF formation in highly nitrogen-doped crystal during high-temperature treatment has not been reported, theoretical calculations of the stability of 3SF in highly nitrogen-doped crystal recently have been reported. 26) These calculations showed that the system energy of 3SF-faulted region is lower than that of perfect 4H region in highly nitrogen-doped crystal. Therefore, it is considered that 3SF formation may have occurred in the highly nitrogen-doped substrate in this study, just as with the DSF formation.…”

Section: Discussion Of Sf Formation During Process Of Epitaxial Growthmentioning

confidence: 95%

Observation of multilayer Shockley-type stacking fault formation during process of epitaxial growth on highly nitrogen-doped 4H-SiC substrate

Suo

Yamashita

Eto

et al. 2019

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

We investigated the formation of double Shockley-type stacking fault (DSF) and other types of stacking fault (SF) during a process of epitaxial growth by chemical vapor deposition on a highly nitrogen-doped 4H-SiC substrate. By comparing the bulk substrate before epitaxial growth and the substrate after growth with an epitaxial layer, bar-shaped SFs turned out to have formed during the process of epitaxial growth on the highly nitrogen-doped substrate. These bar-shaped SFs were identified to be DSFs and triple Shockley-type stacking faults by scanning transmission electron microscopy.

show abstract

Section: Discussion Of Sf Formation During Process Of Epitaxial Growthmentioning

confidence: 95%

Observation of multilayer Shockley-type stacking fault formation during process of epitaxial growth on highly nitrogen-doped 4H-SiC substrate

Suo

Yamashita

Eto

et al. 2019

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer

Shi

Wang

Wu³

et al. 2021

Solid-State Electronics

View full text Add to dashboard Cite

Quantum well action model for the formation of a single Shockley stacking fault in a 4H-SiC crystal under non-equilibrium conditions

Mannen

Shimada

Asada

et al. 2019

Journal of Applied Physics

View full text Add to dashboard Cite

The formation of single Shockley stacking faults (SSSFs) in 4H-SiC crystals under non-equilibrium conditions (e.g., the forward biasing of PiN diodes and ultraviolet light illumination) is a key phenomenon in the so-called bipolar degradation of SiC power devices. This study theoretically investigated the physical mechanism of this phenomenon based on the concept of quantum well action. As a first approximation describing the non-equilibrium state of the material, we employed quasi-Fermi level approximation. We then made improvements by considering several physical effects governing the carrier distribution near and in the SSSF. The improved model accounts well for the excitation threshold and the temperature dependence of SSSF expansion. Thus, the model provides useful insights into the driving force of SSSF expansion under non-equilibrium conditions.

show abstract

Stability of multiple Shockley type basal plane stacking faults in heavily nitrogen-doped 4H-SiC crystals

Cited by 4 publications

References 36 publications

Observation of multilayer Shockley-type stacking fault formation during process of epitaxial growth on highly nitrogen-doped 4H-SiC substrate

Observation of multilayer Shockley-type stacking fault formation during process of epitaxial growth on highly nitrogen-doped 4H-SiC substrate

Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer

Quantum well action model for the formation of a single Shockley stacking fault in a 4H-SiC crystal under non-equilibrium conditions

Contact Info

Product

Resources

About