Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation

Milosavljević, M.; Milinović, V.; Peruško, D.; Grce, Ana; Stojanović, Marijana; Pjević, D.; Mitrić, Miodrag; Kovač, Janez; Homewood, K. P.

doi:10.1016/j.nimb.2011.06.017

Cited by 14 publications

(6 citation statements)

References 31 publications

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“…In heterogeneously multilayered films, interlayer interfaces will form spontaneously. This is because the newly deposited sublayer cannot coherently grow along the crystallographic planes of the previous sublayer due to differences in sublayer material properties such as atomic radius, crystal structure, and chemical bonding property [38,39]. However, this mechanism is invalid for HM film due to its uniform chemical composition.…”

Section: Hm Film Growth Mechanismmentioning

confidence: 99%

Fabrication of homogenous multilayered W films by multi-step sputtering deposition: a novel grain boundary enrichment strategy

et al. 2015

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Using a multi-step deposition approach, we develop a strategy of homogeneous multilayered (HM) structure to enrich the grain boundary (GB) of sputtered W films. In comparison with the single-layered film, the HM W film is easily controllable for the film GB density. When decreasing the film modulation period t m from 160 nm to 7 nm, the GB density gradually increased from 0.065 nm(-1) to 0.275 nm(-1) without changing the phase structure of the films. Accordingly, the film's electrical resistivity and mechanical hardness, which are related to the GBs, changed from 40.1 μΩ · cm to 75.3 μΩ · cm and from 12.1 GPa to 16.2 GPa, respectively. Detailed analysis showed that the formation of an HM structure is related to the temperature evolution of the film growing surface during the multi-step sputtering process. This study could provide a general engineering approach to enrich film interfaces and allows for the development of thin films with novel microstructures.

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Section: Hm Film Growth Mechanismmentioning

confidence: 99%

Fabrication of homogenous multilayered W films by multi-step sputtering deposition: a novel grain boundary enrichment strategy

et al. 2015

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“…For different metallic multilayer system, values of E m didn't appear much difference in the whole energy range (0. [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. It was about 16 keV at 1 MeV and 240 keV at 14 MeV.…”

Section: Pka Spectramentioning

confidence: 99%

“…The current paper presents the neutron irradiation damage effects on four kinds of metallic multilayer nanocomposites (Cu/Nb, Ag/V, Fe/W, Ti/Ta), which have been tested using the Monte Carlo method toolkit MCNP and Geant4. These four kinds of multilayers have good interface self-healing properties [11][12][13][14]. …”

Section: Introductionmentioning

confidence: 99%

Characterization of neutron induced damage effect in several types of metallic multilayer nanocomposites based on Monte Carlo simulation

Chen¹,

Tang²,

Yang³

et al. 2015

Nuclear Instruments and Methods in Physics Research Section B:

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“…Furthermore, mutual immiscibility of components suppresses inter-layer mixing, which can be significant at high irradiation doses, and can lead to degradation of the multilayered structure. Ion irradiation tolerance was demonstrated on a number of immiscible metallic multilayered systems, such as Cu/Nb, Cu/W, Ag/Ni, or Ta/Ti [2][3][4][5][6]. Recent developments report a novel approach for fabricating a 4 mm-thick Cu/Nb multilayered crystallographically stable nanocomposite via accumulative roll bonding technique [7], opening a significant route for bulk nanocomposites as structural materials in advanced nuclear power systems.…”

Section: Introductionmentioning

confidence: 99%

Compositional and structural studies of ion-beam modified AlN/TiN multilayers

Amati

Gregoratti

Sezen

et al. 2017

Applied Surface Science

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This paper reports on compositional and structural modifications induced in coated AlN/TiN multilayers by argon ion irradiation. The initial structure consisting of totally 30 alternate AlN (8 nm thick) and TiN (9.3 nm thick) layers was deposited on Si (100) wafers, by reactive sputtering. Irradiation was done with 180 keV Ar + to a high dose of 8x10 16 ions/cm 2 , which introduces up to ~8 at.% of argon species, and generates a maximum displacement per atom of 92 for AlN and 127 for TiN, around the projected ion range (109±34 nm). Characterizations were performed by Rutherford backscattering spectrometry, spatially resolved x-ray photoelectron spectroscopy, and transmission electron microscopy. The obtained results reveal that this highly immiscible and thermally stable system suffered a severe modification upon the applied ion irradiation, although it was performed at room temperature. They illustrate a thorough inter-layer mixing, atomic redistribution, structural change and phase transformation within the affected depth. The original TiN layers appear to grow in thickness, consuming the adjacent AlN layers, while retaining the fcc crystalline structure. In the mostly affected region, the interaction proceeds until all of the original AlN layers are consumed. Compositional studies with photoemission spectroscopy show that due to the ion irradiation treatment the TiN and AlN layers are transformed into Ti 0.75 Al 0.25 N and Ti 0.65 Al 0.35 N ternary compounds characterized by a better homogenized chemical form compared to non-irradiated layers. The results can be interesting towards further development of radiation tolerant materials based on immiscible ceramic nanocomposites.

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Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation

Cited by 14 publications

References 31 publications

Fabrication of homogenous multilayered W films by multi-step sputtering deposition: a novel grain boundary enrichment strategy

Fabrication of homogenous multilayered W films by multi-step sputtering deposition: a novel grain boundary enrichment strategy

Characterization of neutron induced damage effect in several types of metallic multilayer nanocomposites based on Monte Carlo simulation

Compositional and structural studies of ion-beam modified AlN/TiN multilayers

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