Stability of tantalum nitride thin film resistors

Au, Chi; Anderson, Wayne A.; Schmitz, D.; Flassayer, J. C.; Collins, F. M.

doi:10.1557/jmr.1990.1224

Cited by 62 publications

(4 citation statements)

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“…Transition metal nitrides have been a type of material of great interest, being widely studied for their importance both in fundamental science and in a wide range of technological applications [1,2]. Between their highlighted characteristics, mechanical properties, such as high hardness and thermal stability, as well as the high melting point, classify transition metal nitrides as refractory materials.…”

Section: Introductionmentioning

confidence: 99%

Growth Mechanisms of TaN Thin Films Produced by DC Magnetron Sputtering on 304 Steel Substrates and Their Influence on the Corrosion Resistance

et al. 2022

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In this work, thin films of TaN were synthesized on 304 steel substrates using the reactive DC sputtering technique from a tantalum target in a nitrogen/argon atmosphere. All synthesis parameters such as gas ratio, pressure, gas flow, and substrate distance, among others, were fixed except the applied power of the source for different deposited coatings. The effect of the target power on the formation of the resulting phases and the microstructural and morphological characteristics was studied using XRD and AFM techniques, respectively, in order to understand the growth mechanisms. Phase, line profile, texture, and residual stress analysis were carried out from the X-ray diffraction patterns obtained. Atomic force microscopy analysis allowed us to obtain values for surface grain size and roughness which were related to growth mechanisms in accordance with XRD results. Results obtained showed a strong correlation between the growth energy with the crystallinity of the samples and the formation of the possible phases since the increase in the growth power caused the samples to evolve from an amorphous structure to a cubic monocrystalline structure. For all produced samples, the δ-TaN phase was observed despite the low N2 content used in the process (since for low N2 content it was expected to be possible to obtain films with α-Ta or hexagonal ε-TaN crystalline structure). In order to determine the corrosion resistance of the coatings, electrochemical impedance spectroscopy and polarization resistance were employed in the Tafel region. The results obtained through this evaluation showed a direct relationship between the power used and the improvement of the properties against corrosion for specific grain size values.

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Section: Introductionmentioning

confidence: 99%

Growth Mechanisms of TaN Thin Films Produced by DC Magnetron Sputtering on 304 Steel Substrates and Their Influence on the Corrosion Resistance

et al. 2022

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“…However, the resistivity of the barrier layer becomes less important as the dimensions of the interconnects are reduced, therefore, Ta 3 N 5 may become advantageous in the future [5]. In addition to its use as a diffusion barrier, TaN x has many other applications, for example, conductive TaN has been investigated as a gate electrode [17][18][19], a work function tuning layer [20], thin film resistors [21], and as a non-magnetic interlayer in non-volatile magnetic random access memory (MRAM) [22]. Ta 3 N 5 has been used in photonic structures, such as inverse opals because of its high refractive index (3) and partial transparency in the visible wavelengths [23].…”

Section: Introductionmentioning

confidence: 99%

Atomic layer deposition of TaN and Ta3N5 using pentakis(dimethylamino)tantalum and either ammonia or monomethylhydrazine

Fang

Aspinall

Odedra³

et al. 2011

Journal of Crystal Growth

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“…Tantalum nitrides (TaN) are chemically inert and hard, which makes them very attractive in applications such as diffusion barrier [1], wear and corrosion-resistant materials [2] and highspeed thermal printing heads [3], as well as thin-film resistors in various electronic and optical devices [4,5].…”

Section: Introductionmentioning

confidence: 99%

Preparation of Ta(C)N films by pulsed high energy density plasma

Feng¹,

Chen²,

Zhang³

et al. 2007

J. Phys. D: Appl. Phys.

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The pulsed high energy density plasma (PHEDP) is generated in the working gas due to a high-voltage high-current discharge, within a coaxial gun. In PHEDP surface modification, discharge is applied for preparing the amorphous and nanostructured high-melting materials as thin films deposited on various substrates. In this investigation, Ta(C)N films were deposited using PHEDP on stainless steel. Pure tantalum and graphite were used as the inner and outer electrodes of the PHEDP coaxial gun, respectively. Nitrogen was used as the working gas and also one of the reactants. Preliminary study on the films prepared under different conditions shows that the formation of Ta(C)N is drastically voltage dependent. At lower gun voltage, no Ta(C)N was detected in the films; when the gun voltage reaches or exceeds 3.0 kV, Ta(C)N occurred. The films are composed of densely stacked nanocrystallines with diameter less than 30 nm, and some grains are within 10 nm in diameter.

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Stability of tantalum nitride thin film resistors

Cited by 62 publications

References 1 publication

Growth Mechanisms of TaN Thin Films Produced by DC Magnetron Sputtering on 304 Steel Substrates and Their Influence on the Corrosion Resistance

Growth Mechanisms of TaN Thin Films Produced by DC Magnetron Sputtering on 304 Steel Substrates and Their Influence on the Corrosion Resistance

Atomic layer deposition of TaN and Ta3N5 using pentakis(dimethylamino)tantalum and either ammonia or monomethylhydrazine

Preparation of Ta(C)N films by pulsed high energy density plasma

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