No abstract

Thick GaN layers have been grown by hydride vapor phase epitaxy (HVPE) on different GaN templates grown by metalorganic vapor phase epitaxy. Crack formation could be reduced by using a hydrogen/nitrogen carrier gas mixture. By carefully optimizing the growth conditions in the final stage of the process, excellent surface morphologies could be obtained at still acceptably high growth rates. Up to 300 µm thick crack-free HVPE layers with a mirror like surface could be grown on our FACELO templates.

No abstract

No abstract

No abstract